LNA和VCO电路的研究与设计

发布时间：2018-04-16 08:22

本文选题：低噪声放大器 + 压控振荡器　；参考：《东南大学》2015年硕士论文

【摘要】：无线通信事业的迅速发展和个人无线产品的快速普及,对射频接收机的性能提出了越来越高的要求。低噪声放大器(LNA)作为射频接收机的第一级有源模块,对接收机系统的整体性能有着重要的影响。锁相环(PLL)为射频接收机提供变频所需的本振信号,是射频接收机的核心模块,压控振荡器(VCO)作为PLL环路中提供频率输出的模块,直接决定了本振信号的频率调谐范围和带外相位噪声。因此,研究和设计高性能的LNA和VCO,具有重要的意义和价值。考虑到SiGe工艺的特殊性,本文首先对设计LNA所采用的SiGe BiCMOS工艺进行了简单介绍并分析了器件中的噪声,然后比较了LNA的几种基本结构和性能差异,叙述了窄带单端LNA的设计原理。在考虑LNA的各种性能参数折中的情况下,最后选择了采用射极电感负反馈和电阻负反馈的结构来实现噪声匹配与功率匹配,设计了一种工作在北斗二代导航系统B3频点的窄带LNA,完成了版图设计并通过了后仿真验证。后仿真结果表明,在工作频率1268.520MHz处LNA的噪声系数为1.05dB,增益为20.3dB,S11和$22分别为-12.2dB和-11.8dB,功耗为13mW。在设计VCO之前本文首先简单介绍了振荡器的分析方法及LC VCO的设计原理,然后详细分析了VCO的相位噪声模型,并总结了几种常用的相位噪声优化技术。在考虑VCO的各种性能参数折中的情况下,本次设计的VCO采用尾电流型全NMOS交叉耦合结构,利用四组差分开关电容阵列将整个频率调谐范围划分为十六个子频带,实现了宽带覆盖,采用二次谐波滤波网络优化VCO的相位噪声性能,基于0.13μm CMOS工艺设计了一种宽带低相位噪声LC VCO。文中给出了详细的设计过程,完成了版图设计、后仿真验证并流片测试。在片测试结果表明,VCO的功耗与输出信号幅度与后仿真结果基本一致,在1.2V电源电压下,消耗总电流都为12.8mA,频率调谐范围较后仿真的11.6GHz～15.1GHz整体下降了大约1.7GHz,相位噪声性能也较后仿真的-111.2dBc/Hz@1MHz有所下降。经过分析,VCO性能的下降主要是由于高频下寄生电容提取不准确和压控信号线上存在的噪声引起的。
[Abstract]:With the rapid development of wireless communication and the rapid popularization of personal wireless products, the performance of RF receiver is required more and more.LNA (low noise Amplifier), as the first stage active module of RF receiver, has an important effect on the overall performance of the receiver system.Phase locked loop (PLL) is the core module of RF receiver, which provides the local oscillator signal for RF receiver frequency conversion. VCO is used as the module of frequency output in PLL loop.The frequency tuning range and out-of-band phase noise of the local oscillator signal are directly determined.Therefore, it is of great significance and value to study and design high performance LNA and VCO.Considering the particularity of SiGe process, the SiGe BiCMOS process used in the design of LNA is introduced in this paper, and the noise in the device is analyzed. Then, several basic structures and performance differences of LNA are compared.The design principle of narrow band single terminal LNA is described.Considering the compromise of various performance parameters of LNA, the structure of emitter inductor negative feedback and resistor negative feedback is adopted to realize noise matching and power matching.A narrow band LNA working at the B3 frequency point of Beidou second generation navigation system is designed, and the layout design is completed and verified by post-simulation.The simulation results show that the noise coefficient, gain and power consumption of LNA are 1.05dB, 20.3dB S11 and -11.8dB, respectively, and the power consumption is 13mW at the operating frequency 1268.520MHz. The simulation results show that the noise coefficient is 1.05dB, the gain is 20.3 dB, and the gain is -11.8dB, respectively.Before the design of VCO, this paper briefly introduces the analysis method of oscillator and the design principle of LC VCO, then analyzes the phase noise model of VCO in detail, and summarizes several commonly used phase noise optimization techniques.Considering the compromise of various performance parameters of VCO, the VCO designed in this paper adopts the full NMOS cross-coupling structure of tail current mode, and divides the whole frequency tuning range into sixteen subbands by using four sets of differential switched capacitor arrays.The second harmonic filter network is used to optimize the phase noise performance of VCO. Based on 0.13 渭 m CMOS process, a wideband low phase noise LC VCO is designed.The detailed design process is given, the layout design is completed, the post-simulation is verified and the chip is tested.The results of chip test show that the power consumption and output signal amplitude of VCO are in good agreement with the simulation results, and at 1.2V power supply voltage,The total current consumption is 12.8mA. the frequency tuning range is about 1.7 GHz lower than that of the post-simulated 11.6GHz~15.1GHz, and the phase noise performance is also lower than that of -111.2dBc / Hz @ 1MHz.The degradation of VCO performance is mainly caused by the inaccurate extraction of parasitic capacitance at high frequency and the noise in the voltage control signal line.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN752;TN722.3;TN851

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