MgInSnO薄膜晶体管的研制

发布时间：2018-04-16 16:15

  本文选题：氧化物半导体 + MgInSnO　； 参考：《北京交通大学》2017年硕士论文

【摘要】：薄膜晶体管(thin film transistors,TFT)是平板显示领域不可或缺的关键部件。以氧化锌(ZnO)为代表的金属氧化物薄膜晶体管以其迁移率高,开口率高等优点吸引了越来越多的关注,因此被认为是替代传统非晶硅(a-Si)和多晶硅(p-Si)的下一代薄膜晶体管技术。但ZnO薄膜通常是多晶结构,容易产生晶界缺陷,且在制备过程中容易产生氧空位缺陷,这制约了其性能的提高,而MgO拥有较强的金属-氧键能,可以抑制氧空位的形成。然而,到目前为止,几乎没有关于MgO-TFT的报道。本文首次以MgInSnO为有源层制成底栅型薄膜晶体管,器件性能可以达到饱和迁移率约为12cm2/Vs,开关比约为107,阈值电压约为0-10V。主要研究内容如下:1.研究了退火温度及退火氧气流量对MgInSnO薄膜晶体管性能的影响,发现当退火温度为750℃时器件性能最佳,进一步提高退火温度使得MgInSnO薄膜由非晶态转变为多晶态,器件性能明显下降;退火氧气流量为400 SCCM时器件性能最佳,氧气流量过高或过低都会使器件性能下降。2.研究了有源层厚度对MgInSnO薄膜晶体管性能的影响,发现有源层厚度为25nm时器件性能最佳,薄膜过厚时器件性能下降且由增强型转变为耗尽型。3.研究了宽长比和器件尺寸对器件性能的影响,发现宽长比小的器件迁移率较大,这是由于边沿电流效应的存在;而尺寸较小的器件迁移率较高,这是由于尺寸越小载流子的传输路径越短,受到的散射越少。
[Abstract]:Thin film transistorsTFT is an indispensable key component in flat panel display.Metal oxide thin film transistors, such as zinc oxide (ZnO), have attracted more and more attention because of their high mobility and high opening rate. Therefore, they are considered as the next generation thin film transistors to replace traditional amorphous silicon (a-Si) and polycrystalline silicon (p-Si).However, ZnO thin films are usually polycrystalline structure, which is easy to produce grain boundary defects and oxygen vacancy defects in the preparation process, which restricts the improvement of their properties. However, MgO has a strong metal-oxygen bond energy, which can inhibit the formation of oxygen vacancies.So far, however, there have been few reports of MgO-TFT.In this paper, we first use MgInSnO as the active layer to fabricate the bottom gate type thin film transistor. The device can achieve saturation mobility of about 12 cm 2 / V s, switching ratio of about 107 and threshold voltage of 0 10 V.The main research contents are as follows: 1.The effects of annealing temperature and annealing oxygen flow rate on the properties of MgInSnO thin film transistors are studied. It is found that the device performance is the best when annealing temperature is 750 鈩，

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