磁控溅射法制备硅碳氮薄膜的研究

发布时间：2018-04-16 18:35

本文选题：磁控溅射 + SiCN薄膜　；参考：《西北大学》2015年硕士论文

【摘要】：硅碳氮(SiCN)作为一种新型宽禁带半导体材料,具有优异的光学、电学和机械性能。其与si基集成电路工艺兼容、独特的发光性能、带隙宽度可调(紫外到可见光范围)等特点,使其成为光-电集成电路(Optoelectronic Integrated Circuit, OEIC)的优选材料。采用射频反应磁控溅射法,以氩气(工作气体)、氮气(反应气体)、硅靶、碳靶为源材料在Si/石英基底上制备SiCN薄膜。通过椭偏仪、X射线衍射仪、傅里叶红外光谱仪、X射线光电子能谱仪、扫描电子显微镜、紫外-可见分光光度计和荧光光谱仪等仪器对所制备SiCN薄膜的膜厚、晶体结构、表面形貌、化学键、透光率、光致发光等特性进行了表征,较为系统地研究了Si源功率、C源功率、N源流量对SiCN薄膜的影响。结果表明,SiCN薄膜主要由Si、C、N三种元素构成,并形成了以Si-N键、Si-C键、C-N键、C=N键、C-C键、C=C键为主的复杂三元网络结构。SiCN薄膜中Si、C互为替代元素,提升Si(C)源功率有助于提高薄膜中Si(C)元素的含量,降低C(Si)元素的含量；增大N源流量,Si元素的含量降低,c元素及N元素含量增加；由于表面氧化及物理吸附,薄膜会引入一定的O元素,其含量可以指示薄膜的粗糙度。同时提高Si源功率、C源功率、N源流量有助于提高SiCN薄膜的沉积速率,但过高的功率并不利于沉积速率的提高。SiCN薄膜具有良好的透光性,Si源功率的提升可以提高薄膜的光学带隙,C源功率或N源流量的增加则会降低光学带隙。SiCN薄膜中365nm、 440nm/450nm、 510nm/550nm处的发光分别是SiCN薄膜中非晶氧化硅缺陷、C原子的Sp2杂化和β-SiC纳米晶的量子限制效应引起的。
[Abstract]:As a new wide band gap semiconductor material, silicon carbon nitride (sic) has excellent optical, electrical and mechanical properties.It is compatible with si-based integrated circuit technology, unique luminescence performance and adjustable bandgap width (UV to visible light range), which makes it an excellent material for optoelectronic Integrated circuit (OEICs)SiCN thin films were prepared on Si/ quartz substrate by RF reactive magnetron sputtering with argon (working gas), nitrogen (reactive gas, silicon target, carbon target) as the source material.The thickness and crystal structure of SiCN thin films were studied by means of X-ray diffractometer, Fourier infrared spectrometer, X-ray photoelectron spectrometer, scanning electron microscope, UV-Vis spectrophotometer and fluorescence spectrometer.The surface morphology, chemical bond, transmittance and photoluminescence characteristics were characterized. The influence of Si source power, C source power and N source flux on SiCN films was systematically studied.The results show that the SiCN thin film is mainly composed of three elements, Si-C and C-N, and the complex ternary network structure. SiC is a substitute element in Si-C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C / C, respectively.Increasing the source power of Si-C can increase the content of Si-C in the film and decrease the content of Ca-Si-C, increase the flow rate of N source, decrease the content of C and N, and increase the content of C and N because of the surface oxidation and physical adsorption.A certain O element is introduced into the film, and its content can indicate the roughness of the film.At the same time, increasing Si source power and C source power and N source flow can improve the deposition rate of SiCN films.However, too high power is not conducive to the increase of deposition rate. SiCN thin film has good transmittance. The increase of Si source power can increase the optical band gap C source power or the N source flux, and decrease the optical band gap. SiCN thin film.The luminescence at 365nm, 440 nm / 450nm, 510nm/550nm is caused by the Sp2 hybrid of C atom of amorphous silicon oxide defect in SiCN film and the quantum confinement effect of 尾 -SiC nanocrystalline, respectively.
【学位授予单位】：西北大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.92

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