温度对单晶硅表面摩擦诱导选择性刻蚀的影响研究

发布时间：2018-04-17 02:36

本文选题：摩擦诱导纳米加工 + 选择性刻蚀　；参考：《西南交通大学》2017年硕士论文

【摘要】：单晶硅具有优良的机械性能、电子学性能以及物理性能,被广泛地应用于构建半导体器件、大规模集成电路、太阳能电池等方面。硅基纳米加工技术在纳米科技领域具有重要的地位,是实现纳米科技产品的基础。目前,典型的硅基纳米加工技术,包括光刻技术、纳米压印技术、聚焦离子束技术和扫描探针技术等,都在改进现有工艺的同时,进一步了拓展纳米加工的应用范围。然而,随着纳米技术的深入发展,任何一种加工方法都难以满足多元化的应用需求。近年来,摩擦诱导选择性刻蚀加工方法是在扫描探针加工技术的基础上,结合湿法刻蚀技术进而提出的一种新型纳米加工方法。该方法简单、灵活、分辨率高,同时具备不依赖于模板以及外加电场等优点。然而,摩擦诱导选择性刻蚀过程基于化学反应,温度对选择性刻蚀加工的影响规律不清、加工机制不明,尚需开展进一步的研究。本文采用扫描探针显微镜、纳米力学测试系统、自主研制的大面积微纳米加工设备以及相关的分析测试手段,系统性地研究了温度对单晶硅表面摩擦诱导选择性刻蚀的影响,阐明了温度对选择性刻蚀过程的影响机制;在此基础上进一步发展了单晶硅表面压痕诱导选择性刻蚀加工方法。本论文的主要研究内容和创新点如下:(1)考察了温度对单晶硅表面摩擦诱导选择性刻蚀的影响规律在KOH溶液选择性刻蚀过程中,单晶硅表面所形成的凸结高度随着刻蚀温度的升高而增加;而当温度为80℃时,所形成的凸结构会出现高度不均匀情况。温度的升高将导致表面粗糙度增大和亲水性增强,而其微观机械性能却随着温度的升高而降低。利用X-射线光电子能谱(XPS),对选择性刻蚀前后的表面化学成分分析表明:不同温度下的选择性刻蚀后,未在单晶硅表面并引入其他杂质。(2)阐明了温度对单晶硅表面摩擦诱导选择性刻蚀的影响机制分析可知,温度升高引起的更频繁的碰撞频率,从而导致剧烈的化学反应,即导致单晶硅选择性刻蚀后所得到凸结构高度增大。根据凸结构高度随温度的变化拟合曲线表明,选择性刻蚀速率的自然对数的变化与温度的倒数是呈线性关系的,因而该过程可用阿累尼乌斯方程表达。进一步分析表明,摩擦诱导选择性刻蚀的活化能Ea估算值为0.33～0.38 eV。(3)发展了单晶硅表面的压痕诱导选择性刻蚀加工方法基于摩擦诱导选择性刻蚀机理,探索了单晶硅表面的压痕诱导选择性刻蚀纳米加工方法。对于压痕诱导选择性刻蚀加工,刻蚀时间和压痕载荷决定了金字塔凸结构的高度及曲率半径,即随着刻蚀时间或者载荷的增加,凸结构高度亦增加;通过控制加工参数,可实现多针尖的阵列加工。本论文系统研究了温度对单晶硅表面摩擦诱导选择性刻蚀的影响规律,优化加工条件,为单晶硅表面实现大高宽比结构的可控加工奠定了基础。同时,本文研究进一步丰富了摩擦诱导选择性刻蚀加工的原理和方法,也探索了压痕诱导选择性刻蚀纳米加工方法:通过控制加工参数可以获得高度均匀一致的金字塔形凸结构阵列,其有望应用于多针尖阵列加工。
[Abstract]:Silicon has excellent mechanical properties, electronic properties and physical properties, is widely used in the construction of large-scale integrated circuits, semiconductor devices, solar cell and so on. The nano silicon processing technology plays an important role in the field of nano science and technology, is the basis of nano science and technology products. At present, the typical silicon based nano processing technology, including lithography, nanoimprint lithography, focused ion beam technology and scanning probe techniques, are on the improvement of the existing process at the same time, further expand the scope of application of nano machining. However, with the further development of nanotechnology, any kind of processing methods are difficult to meet the application requirements of diversification. In recent years, the friction induced selective etching the method is based on scanning probe processing technology, combined with a new type of nano machining method of wet etching technology and then put forward the method simply. A single, flexible, high resolution, and have not depend on the template and the applied electric field and other advantages. However, the friction induced selective etching process based on chemical reaction, the influence of temperature on the selective etching process is not clear, the processing mechanism is unknown, still need to carry out further research. This paper uses the scanning probe microscope, nanomechanical testing system, large the area developed by micro nano processing equipment and testing means, a systematic study of the influence induced by selective etching temperature on the silicon surface friction, the temperature effect and the mechanism of selective etching process; on the basis of the further development of the silicon surface indentation induced selective etching method. The main research of this paper the content and innovation are as follows: (1) the effects of temperature on the silicon surface friction law effect induced by selective etching in KOH solution. Selective etching process, forming the convex silicon surface height increase with the increase of etching temperature; when the temperature is 80 degrees centigrade, the convex structure formed will be highly inhomogeneous. Temperature increasing will lead to increase of surface roughness and hydrophilicity, and the micro mechanical properties but rather decreased with increasing temperature. By using X- ray photoelectron spectroscopy (XPS), surface chemical composition of selective etching before and after analysis showed that the selective etching under different temperature, not on the silicon surface and the introduction of other impurities. (2) the effect of temperature on friction mechanism induced by selective etching on the silicon surface analysis, temperature increase the collision frequency more frequently caused, resulting in severe chemical reaction, which leads to silicon selective etching by convex structure height increases. According to the convex structure height with temperature changes to The curve shows that the temperature change and the natural logarithm of the reciprocal of the selective etching rate is linear, so the process can be Arrhenius equation expression. Further analysis shows that the activation energy of Ea estimate is 0.33 ~ 0.38 eV. friction induced by selective etching (3) the development of the silicon surface indentation induced selective etching method based on friction induced selective etching mechanism, explore the silicon surface indentation induced by selective etching of nano machining method. For indentation induced selective etching, etching time and indentation load determines the height and radius of curvature of Pyramid convex structure, with the increase of etching time or load, the convex structure height is also increasing; by controlling the processing parameters, array the processing can achieve the tip. This paper studies the temperature on the silicon surface friction induced by selective etching. Sound rules, optimization of processing conditions for high aspect ratio controllable processing structure laid the foundation of the realization of the silicon surface. At the same time, this paper further enriches the principle and method of friction induced selective etching, but also explored the indentation induced selective etching method: nano processing Pyramid convex structure array uniform by controlling the processing parameters can be applied to many, it is expected to tip array processing.

【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.12

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