晶体表面的离子束刻蚀机理研究

发布时间：2018-04-17 06:05

  本文选题：晶体 + 离子束刻蚀　； 参考：《西安工业大学》2016年硕士论文

【摘要】：随着科学技术的发展,空间光学元件、高功率激光器、X射线光学系统得到越来越多的应用,同时集成电路也向着大规模以及超大规模发展,这就对光学以及光电元件表面质量提出了较高的要求。离子束刻蚀抛光作为一种非接触抛光技术,有着诸多的优点,因此在获取光学以及光电元件高质量表面时得到了广泛的应用。本文的研究内容主要分为两部分：离子束刻蚀抛光和KDP的离子束沉积修正抛光。主要对石英、硫化锌以及KDP进行了离子束刻蚀抛光,研究了不同的离子束工艺参数对离子束刻蚀抛光的影响；同时研究了离子束沉积修正抛光技术,并对KDP进行了离子束沉积修正抛光。(1)石英、硫化锌以及KDP的离子束刻蚀抛光。研究了不同的工艺参数(离子束入射能量、离子束流、离子束入射角度以及工作气体流量)对离子束刻蚀的影响,揭示了晶体表面在离子束刻蚀过程中表面形貌的演变与离子束参数之间关系,以及晶体表面的离子束刻蚀机理。(2)KDP的离子束沉积修正抛光。首先进对制备好的平坦化层的减薄处理,对比了ICP减薄以及离子束刻蚀减薄,选择了离子束刻蚀减薄平坦化层,工艺参数为：离子束入射角度为45°,离子束流为354 μA/cm2,离子束入射能量500eV,工作气体中氩气氧气流量分别为7.2sccm和6sccm:然后选择了离子束沉积修正抛光工艺参数,选择一个KDP和PI胶平坦化层有相同刻蚀速率,同时表面形貌不会有较大损失的工艺参数,工艺参数为：离子束入射角度为450,离子束流为310 μ/cm2,离子束入射能量为400eV,工作气体中氩气氧气流量分别为12.2sccm和1sccm:最后对KDP进行了离子束沉积修正抛光,最终使得KDP表面粗糙度值降低了0.31nm。
[Abstract]:With the development of science and technology, space optical components, high power laser X ray optical systems have been more and more applied. At the same time, integrated circuits are also developing to large scale and very large scale.Therefore, the surface quality of optical and optoelectronic components is required.Ion beam etching polishing as a non-contact polishing technology has many advantages, so it has been widely used in obtaining high quality surface of optical and optoelectronic elements.This paper is divided into two parts: ion beam etching polishing and KDP ion beam deposition correction polishing.The ion beam etching polishing of quartz, zinc sulfide and KDP was carried out, and the effect of different ion beam process parameters on ion beam etching polishing was studied, and the ion beam deposition correction polishing technology was also studied.The ion beam etching polishing of KDP was carried out by ion beam deposition correction polishing of quartz, zinc sulphide and KDP.The effects of different process parameters (ion beam incident energy, ion beam current, ion beam incident angle and working gas flux) on ion beam etching were studied.The relationship between the evolution of surface morphology and ion beam parameters during ion beam etching and the ion beam etching mechanism of crystal surface were revealed.Firstly, the thinning treatment of the prepared flattening layer is introduced, and the ICP thinning and ion beam etching are compared, and the ion beam etching flattening layer is selected.The technological parameters are as follows: the incident angle of ion beam is 45 掳, the ion beam current is 354 渭 A / cm ~ 2, the incident energy of ion beam is 500eV, the flow rate of argon and oxygen in the working gas is 7.2sccm and 6sccm, respectively. The polishing process parameters are modified by ion beam deposition.Choosing a flat layer of KDP and Pi glue has the same etching rate, and the surface morphology will not have a large loss of process parameters.The process parameters are as follows: the incident angle of ion beam is 450, the ion beam current is 310 渭 / cm ~ 2, the incident energy of ion beam is 400eV, and the argon oxygen flux in the working gas is 12.2sccm and 1sccm respectively. Finally, the ion beam deposition correction polishing of KDP is carried out.Finally, the surface roughness value of KDP is reduced by 0.31 nm.
【学位授予单位】：西安工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN305.7
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本文编号：1762372