局部氮化硅包覆颗粒在高效多晶硅铸锭中的应用

发布时间：2018-04-18 00:00

  本文选题：高效多晶硅 + 异质形核　； 参考：《太阳能学报》2017年02期

【摘要】：降低多晶硅晶体中的位错密度,可以提高多晶硅电池的性能,目前多采用异质形核的方法来生长柱状晶粒,以降低晶体中的位错密度,但是目前普遍采用的以SiO_2颗粒作为异质形核点的方法容易导致硅锭底部和坩埚粘连,并导致硅锭中间隙氧(O_i)含量升高。该文通过制备局部氮化硅包覆的SiC-Si O_2复合颗粒(PCP)作为异质形核点来生长柱状晶粒。结果显示采用适当粒径(300~500μm)的PCP具有较好的引晶效果,且对应硅锭的O_i含量显著降低。
[Abstract]:Decreasing dislocation density in polycrystalline silicon crystal can improve the performance of polycrystalline silicon battery. At present, the method of heterogeneous nucleation is used to grow columnar grains in order to reduce the dislocation density in polysilicon crystal.However, the widely used method of using SiO_2 particles as heterogeneous nucleation points easily leads to the adhesion between the bottom of the silicon ingot and the crucible, and to the increase of the content of oxygen oxide in the gap between the ingot and the crucible.In this paper, columnar grains were grown by fabricating SiC-Si O _ 2 composite particles coated with local silicon nitride as heterogeneous nucleation points.The results show that the PCP with proper diameter of 300 渭 m) has a good crystal inducing effect, and the content of oveni in the corresponding silicon ingot decreases significantly.
【作者单位】： 南京工业大学材料科学与工程学院;东海晶澳太阳能科技有限公司;西安华晶电子技术股份有限公司;
【基金】：国家重点基础研究(973)发展计划(2009CB623100) 江苏省普通高校研究生科研创新计划(CXZZ11-0326)
【分类号】：TM914.4;TN304.12
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本文编号：1765862