基于一维氧化铜纳米线的光电子器件的制备及其性能研究

发布时间：2018-04-22 15:37

本文选题：表面机械研磨处理 + 半导体纳米结构　；参考：《合肥工业大学》2015年硕士论文

【摘要】：氧化铜是一种重要的金属氧化物半导体材料,由于其在自然界中含量丰富且合成成本低廉,因此得到了广泛的应用。低维的氧化铜纳米结构(零维或者一维)同样得到了应用,它们可以通过直接加热法、湿化学法、金属辅助法等方法合成。研究发现,通过以上方法合成的氧化铜纳米线具有很高的结晶度以及纵横比,这使得一维氧化铜纳米结构具有很多优异的特性,这些特性使氧化铜纳米线在光电器件领域具有很大的应用前景,例如一维氧化铜结构可以用于制备光电探测器、气体传感器、场发射器件以及催化剂等等,尽管有了以上许多研究,但是对于一维氧化铜纳米结构的传输特性以及光电特性的研究依旧很少,而这对于氧化铜纳米器件构建各种光电设备具有重要作用。因此对于一维氧化铜纳米结构的研究不仅有利于单根氧化铜纳米线光电特性的理解,并且对于高性能光电器件的发展具有重要意义。在本论文中,我们先用表面机械研磨(SMAT)处理铜片,然后在管式炉中直接加热铜片合成氧化铜纳米线。合成的氧化铜纳米线具有很高的结晶性,其生长方向为[110]。我们基于单根氧化铜纳米线制备场效应晶体管,其传输特性表现为弱p型导电行为,接着我们基于第一性原理对其进行理论模拟计算,研究发现理想的氧化铜表现为金属特性,在存在铜缺陷或者氧缺陷的情况下表现为p型特性。我们又对其进行光电特性研究,发现氧化铜纳米线对600mn的光最敏感,并且具有很高的再现性和稳定性。通过实验,我们同样观察到基于柔性材料PET基底的光电探测器在不同的曲率下仍具有很好的再现性。以上研究表明氧化铜纳米线在未来的器件应用中具有很大的潜力。
[Abstract]:Copper oxide is an important metal oxide semiconductor material, which is widely used because of its rich content in nature and low synthesis cost. Low-dimensional copper oxide nanostructures (zero-dimensional or one-dimensional) have also been applied, and they can be synthesized by direct heating, wet chemistry and metal-assisted methods. It is found that the copper oxide nanowires synthesized by the above methods have high crystallinity and aspect ratio, which makes the one-dimensional copper oxide nanostructures have many excellent properties. Because of these characteristics, copper oxide nanowires have great application prospects in the field of optoelectronic devices, such as one-dimensional copper oxide structure can be used in the preparation of photodetectors, gas sensors, field emission devices and catalysts, and so on. In spite of the above researches, there are few studies on the transmission and photoelectric properties of one-dimensional copper oxide nanostructures, which play an important role in the construction of various optoelectronic devices. Therefore, the study of one-dimensional copper oxide nanostructures is not only beneficial to the understanding of the photoelectric properties of single copper oxide nanowires, but also of great significance to the development of high-performance photovoltaic devices. In this thesis, copper oxide nanowires are synthesized by directly heating copper sheets in a tube furnace. The synthesized copper oxide nanowires have high crystallinity and the growth direction is [110]. We fabricate field effect transistors based on single copper oxide nanowires, the transport characteristics of which are weak p type conduction behavior. Then we simulate the transistors based on the first principle and find that the ideal copper oxide exhibits metal properties. In the presence of copper defects or oxygen defects in the presence of p-type characteristics. We also studied its photoelectric properties and found that copper oxide nanowires are most sensitive to the light of 600mn and have high reproducibility and stability. Through experiments, we also observed that the photodetectors based on flexible PET substrate still have good reproducibility under different curvature. The above results show that copper oxide nanowires have great potential in future device applications.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;TN15

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