卧式HVPE生长GaN的计算机模拟

发布时间：2018-04-22 23:37

本文选题：Ⅲ-Ⅴ族氮化物 + 氮化镓　；参考：《南京邮电大学》2015年硕士论文

【摘要】：以GaN和SiC材料为代表的第三代半导体材料,具有带隙宽(2.3eV)、导热性好和电子漂移饱和速度高等优点,能用于制作耐高温、抗辐射、高频、大功率的基器件;由于第三代半导体材料带隙宽,因此还可以用来制作蓝紫光器件。HVPE生长速率高。可用于GaN厚膜的生长,从而制备Ga N同质衬底,从而大大提高GaN基光电器件的性能。本文重点是通过用FLUENT仿真,得到一个优化的腔体结构。本次实验的模拟采用的FLUENT软件是一款用于计算传热问题和流体力学的软件。本文针对卧式HVPE生长系统,根据实际实验得到的数据建立了卧式HVPE反应室二维栅格结构,并对此栅格的结构进行了合理的优化和调整。建立了反应各组成成分和平衡化学反应的化学数据库结构,并进行了模拟。模拟了包括1、衬底到氯化镓入口距离系列;2、氯化镓气体进气口直径系列;3、衬底角度系列的氮化镓生长速度以及均匀性。得到了上述反应腔体结构的优化参数,在此参数条件下生长的Ga N膜均匀性和质量较好。
[Abstract]:The third generation semiconductor material, represented by GaN and SiC, has the advantages of good thermal conductivity and high saturation speed of electron drift. It can be used to fabricate high temperature, radiation resistant, high frequency and high power basic devices. Because of the band gap width of the third generation semiconductor material, it can also be used to fabricate the blue violet light device. HVPE has a high growth rate. It can be used in the growth of GaN thick film, and can be used to fabricate gan homogeneous substrate, thus greatly improving the performance of GaN based optoelectronic devices. The emphasis of this paper is to obtain an optimized cavity structure by FLUENT simulation. The FLUENT software used in this experiment is used to calculate heat transfer and hydrodynamics. In this paper, the two-dimensional grid structure of horizontal HVPE reaction cell is established according to the experimental data of horizontal HVPE growth system, and the structure of the grid is optimized and adjusted reasonably. The chemical database structure of each component and equilibrium chemical reaction was established and simulated. The growth rate and homogeneity of gallium nitride are simulated including 1, the distance between substrate and gallium chloride, the gas inlet diameter series of gallium chloride, and the growth rate and uniformity of gallium nitride in substrate angle series. The optimized parameters of the structure of the reactive cavity are obtained. The gan films grown under these parameters have good uniformity and quality.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.05

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