X波段基片集成波导环行器的研究与制备

发布时间：2018-04-23 20:24

本文选题：X波段 + 基片集成波导(SIW)　；参考：《电子科技大学》2015年硕士论文

【摘要】：通信行业社会现代化发展和人们的生活带来了极大的便利,目前已经进入了4G时代,5G已经提上研发日程。而在通信系统中作为收发、隔离、开关等作用的环形器则有着非常重要的地位。环形器的设计方法、理论、工具在不断发展,性能也在不断提高。目前微波铁氧体环形器向着大功率,小型化,宽带化,高可靠性方向发展,特别是微波通信、能源技术、国防航天等领域。由于波导具有体积和造价的缺陷、微带线有辐射和功率的缺陷,日益满足不了微波技术高功率、低损耗、小体积、低成本的需求。由此人们发现了更有优势的基片集成波导(Substrate Integrated Waveguide,简称SIW)技术。SIW技术兼有矩形波导和微带器件的优点,具有低辐射和插损、高Q值、高功率容量、小型化等特点。可以采用PCB或LTCC工艺将无源、有源器件集成在同一衬底上,减少了由不同工艺制作的器件间的连接转换,实现系统良好的集成,适合大批量生产和应用。为了研制出可实际应用的高性能X波段基片集成波导环形器,本文在以下几个方面做了研究:(1)首先根据理论推导和仿真实验,得到电气参数为:驻波比VSWR小于1.2、插入损耗小于0.4dB、回波损耗与隔离度均大于20dB的Y结SIW环形器。(2)通过研究SIW与微带线的匹配技术,将Y结环形器转化为T型环形器,设计出了性能优越且易于集成的小型化T结SIW环形器,在X波段内,回波损耗和隔离度大于20d B,插入损耗小于0.5 d B,器件尺寸为12mm×12mm×0.635mm。(3)设计了圆柱型铁氧体X波段环形器同样达到了技术指标,验证了本文中基片集成波导环形器设计方法的有效性。(4)对三角形铁氧体柱环形器进行了容差分析,分析了各主要参数变化对于器件性能的影响,这对于器测试和改进具有较大指导意义。(5)通过对带状线夹具测试原理、器件装配工艺的研究,制备出了X波段基片集成波导环形器样品并进行测试。样品体积为:12mm×12mm×0.635mm。整个X波段回波损耗大于10 dB,隔离损耗大于5 dB。在10 GHz中心附近,回波损耗小于20dB,插入损耗小于1 dB,隔离大于20 dB的带宽大于1GHz。本文建立了比较完整的基片集成波导环形器设计体系,在微波元器件、集成电路等方面有着广泛的应用前景。
[Abstract]:The modernization of communication industry and people's life have brought great convenience. At present, 5G has entered the 4G era and has been put on the research and development agenda. In the communication system, as a transceiver, isolator, switch and so on, the loop plays a very important role. The design method, theory and tool of annular device are developing and the performance is improving. At present, microwave ferrite circulators are developing towards high power, miniaturization, broadband and high reliability, especially in the fields of microwave communication, energy technology, national defense and spaceflight. Because the waveguide has the defects of volume and cost, and the microstrip line has the defects of radiation and power, it can not meet the demand of high power, low loss, small volume and low cost of microwave technology day by day. Thus it is found that the substrate Integrated waveguide (SIW) technology has the advantages of both rectangular waveguide and microstrip devices, and has the advantages of low radiation and insertion loss, high Q value, high power capacity and miniaturization. The passive and active devices can be integrated on the same substrate by PCB or LTCC process, which can reduce the connection conversion between the devices made by different processes, and realize the good integration of the system, which is suitable for mass production and application. In order to develop a practical high performance X band substrate integrated waveguide ring, the following aspects have been studied in this paper: 1) first of all, according to the theoretical derivation and simulation experiment, The electrical parameters are as follows: the standing wave ratio (VSWR) is less than 1.2, the insertion loss is less than 0.4 dB, the echo loss and isolation are both greater than 20dB, and the Y-junction SIW ring is transformed into T-type loop by studying the matching technique between SIW and microstrip line. A miniaturized T-junction SIW circulator with superior performance and easy integration is designed. The return loss and isolation are more than 20 dB, the insertion loss is less than 0.5 dB, and the device size is 12mm 脳 12mm 脳 0.635 mm. The validity of the design method of the substrate integrated waveguide ring device in this paper is verified. The tolerance analysis of the triangular ferrite column annular device is carried out, and the influence of the main parameters on the performance of the device is analyzed. This is of great guiding significance for the testing and improvement of the device. (5) through the research on the testing principle of the strip wire clamp and the assembly process of the device, the sample of the X-band substrate integrated waveguide annular device is prepared and tested. The volume of the sample is 12mm 脳 12mm 脳 0.635mm. The whole X band echo loss is more than 10 dB, and the isolation loss is more than 5 dB. Near the center of 10 GHz, the echo loss is less than 20 dB, the insertion loss is less than 1 dB, and the isolation bandwidth greater than 20 dB is greater than 1 GHz. In this paper, a relatively complete substrate integrated waveguide ring design system is established, which has a wide application prospect in microwave components, integrated circuits and so on.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN621

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