MOCVD制备不同衬底GaN外延的在线红外测温比较研究

发布时间：2018-04-27 22:30

  本文选题：测量 + 红外测温　； 参考：《激光与光电子学进展》2017年11期

【摘要】：根据红外测温原理、薄膜等厚干涉模型及相关光学参数,在Al2O3、SiC、Si三种衬底上用金属有机物化学气相沉积(MOCVD)技术制备10μm GaN外延层的过程中,对940nm单色测温、1550nm单色测温、940nm/1550nm比色测温的发射率引起表观温度误差、真实温度与表观温度偏差进行理论比较。利用Si(111)衬底上制备InGaN/GaN多量子阱(MQW)蓝光发光二极管(LED)外延片过程的940nm单色测温及940nm/1550nm比色测温结果,验证该建模及计算的正确性。研究结果表明:在500~1300℃,相同测温法在不同衬底间表观温度误差系数区别不大。相同衬底下,误差系数由小到大依次为:比色测温、940nm单色测温、1550nm单色测温。相同测温法在不同衬底间真实温度与表观温度偏差较大。相同衬底下,偏差结果由小到大依次为:比色测温、1550nm单色测温、940nm单色测温。该计算方法与结论可为红外测温设备的研发、不同衬底GaN基外延测温方法的选择提供借鉴与参考。
[Abstract]:According to the principle of infrared temperature measurement, the thin film equal thickness interference model and related optical parameters, the 10 渭 m GaN epitaxial layer was prepared on three kinds of substrates of Al _ 2O _ 3, Si _ 2O _ 3 and Si by metal-organic chemical vapor deposition (MOCVD) technique. The emissivity of 940nm monochromatic temperature measurement with 1550nm monochromatic temperature measurement at 940nm / 1550nm caused the apparent temperature error and the deviation between the real temperature and the apparent temperature was compared theoretically. The results of 940nm monochromatic temperature measurement and 940nm/1550nm colorimetric thermometry of InGaN/GaN multiple quantum well (MQW) blue light-emitting diode (LED) epitaxial wafers prepared on Si _ (111) substrate verify the correctness of the modeling and calculation. The results show that there is little difference in apparent temperature error coefficient between different substrates by the same temperature measurement method at 500 ~ 1300 鈩，

本文编号：1812615