金刚石锥阵列的无掩膜刻蚀制备及其形貌演变机制

发布时间：2018-04-28 01:05

本文选题：金刚石锥 + 偏压热灯丝化学气相沉积　；参考：《发光学报》2016年07期

【摘要】：为获得具有优良场发射性能的金刚石锥阵列,利用偏压热灯丝化学气相沉积系统分别在高质量大颗粒金刚石厚膜与纳米金刚石薄膜上进行了无掩膜刻蚀研究,系统比较了高质量大颗粒金刚石厚膜与纳米金刚石薄膜的刻蚀特性,制备了大面积均匀金刚石锥阵列和高长径比(20∶1)金刚石纳米线阵列,探讨了金刚石锥的刻蚀形成机理。
[Abstract]:In order to obtain diamond cone arrays with excellent field emission performance, the masked etching of thick diamond films and nanocrystalline diamond films with high quality and large particles were studied by bias pressure hot filament chemical vapor deposition system. The etching characteristics of high quality, large grain diamond thick films and nanocrystalline diamond films were systematically compared. A large area uniform diamond cone array and a diamond nanowire array with a high aspect ratio of 20: 1 were prepared. The etching mechanism of diamond cones was discussed.
【作者单位】：中国海洋大学信息科学与工程学院物理系;中国科学院物理研究所北京凝聚态国家实验室;
【基金】：国家自然科学基金(11274082)资助项目
【分类号】：TN305.7

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