含氧硅基材料的荧光特性研究

发布时间：2018-04-28 04:28

本文选题：nc-Si/SiO多层膜 + 多孔硅纳米线　；参考：《南京大学学报(自然科学)》2017年03期

【摘要】：分别采用等离子体增强化学气相沉积(PECVD)技术和金属辅助化学蚀刻的方法制备了纳米硅/二氧化硅(nc-Si/SiO_2)多层膜和多孔硅纳米线(Si NW)两种含氧的硅基材料.借助透射电子显微镜和扫描电子显微镜对样品的微结构进行表征,在此基础上,利用稳态和时间分辨荧光光谱仪对两种材料的荧光特性进行测量.实验结果表明nc-Si的尺寸越小,多孔Si NW内的孔洞越多,样品的发光越强,但是发光峰不发生移动.在波长为355nm,脉宽为6ns的激光激发下,两种材料都具有微秒(μs)的荧光寿命,对应于载流子从与氧相关的局域态发生辐射复合的过程.将光致发光(PL)强度的增强以及荧光寿命的增大归因于样品内辐射复合中心的增多.同时,在波长为375nm,脉宽为75ps的激光激发下,两种样品在纳秒(ns)范围内均没有检测到荧光衰减信号.
[Abstract]:Plasma enhanced chemical vapor deposition (PECVD) technique and metal-assisted chemical etching were used to fabricate two kinds of oxygen-containing silicon based materials: nanocrystalline silicon / silicon dioxide nc-Si / SiO _ 2 multilayer film and porous silicon nanowire Si _ (NW). The microstructure of the samples was characterized by transmission electron microscope (TEM) and scanning electron microscope (SEM), and the fluorescence characteristics of the two materials were measured by steady-state and time-resolved fluorescence spectrometer. The experimental results show that the smaller the size of nc-Si, the more pores in porous Si NW, the stronger the luminescence of the sample, but the luminescence peak does not move. Under the excitation of a laser with a wavelength of 355nm and a pulse width of 6ns, both materials have a fluorescence lifetime of microsecond (渭 s), which corresponds to the recombination of carriers from a local state related to oxygen. The enhancement of photoluminescence (PL) intensity and the increase of fluorescence lifetime are attributed to the increase of radiation recombination centers in the samples. At the same time, no fluorescence attenuation signal was detected in the nanosecond range of the two samples under laser excitation at a wavelength of 375 nm and pulse width of 75ps.
【作者单位】：郑州轻工业学院电气信息工程学院;江苏科技大学数理学院;
【基金】：郑州轻工业学院博士科研基金(2014BSJJ041) 南京大学固体微结构物理实验室第二十八批开放课题批准项目(M28030) 河南省基础与前沿技术研究计划(152300410130)
【分类号】：TN304

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