磁控溅射工艺及退火温度对h-BN薄膜的影响

发布时间：2018-04-29 06:09

  本文选题：磁控溅射 + h-BN　； 参考：《武汉科技大学》2015年硕士论文

【摘要】：h-BN具有类似石墨的层状结构，独特的结构使h-BN具有禁带宽、导热率高、熔点高、介电常数低、抗热冲击性优良、电绝缘性好等独特的物理化学性质，其性能较石墨更为优良，具有极高的应用潜力。本文主要研究磁控溅射工艺及退火温度对h-BN薄膜的影响。 本论文采用射频磁控溅射法在n型Si (100)衬底上制备BN薄膜，对BN薄膜进行AFM、SEM、FTIR、Raman及XPS分析，研究了氮气流量、负偏压、氢气流量以及退火温度对BN薄膜形貌与结构的影响。结果表明： (1)适量的氮气流量降低了BN薄膜的表面粗糙度，提高了薄膜的结晶度；高的负偏压改变了BN薄膜的层状生长模式及晶粒取向，诱导了h-BN向c-BN的转变，不利于高质量层状h-BN薄膜的制备；适量的氢气流量平衡了h-BN中的缺陷，抑制了h-BN向c-BN的转变，提高了h-BN薄膜稳定性，利于高质量层状h-BN薄膜的制备。 (2)氮气流量、负偏压以及氢气流量显著影响BN薄膜的形貌与结构。在Si衬底上制备高质量层状h-BN薄膜较为优化的溅射工艺条件为：氮气流量为12sccm，负偏压为0V，氢气流量为12sccm。 (3)采取退火方式对h-BN薄膜进行N的补充及H的掺杂。但退火促进h-BN经E-BN和w-BN向c-BN转变，，当退火温度为900℃时，h-BN向c-BN的转变最明显，不利于高质量层状h-BN薄膜的制备。
[Abstract]:H-BN has the unique physical and chemical properties of graphite-like layered structure, such as wide band gap, high thermal conductivity, high melting point, low dielectric constant, excellent thermal impact resistance, good electrical insulation and other unique physical and chemical properties, and its performance is better than that of graphite. Has extremely high application potential. The effects of magnetron sputtering technology and annealing temperature on h-BN thin films are studied in this paper. In this paper, BN thin films were deposited on n-type Si (100) substrates by RF magnetron sputtering. The effects of nitrogen flow rate, negative bias voltage, hydrogen flow rate and annealing temperature on the morphology and structure of BN thin films were investigated by means of XPS and XPS analysis. The results show that: The surface roughness and crystallinity of BN thin films were decreased by proper nitrogen flow rate, and the layer growth pattern and grain orientation of BN thin films were changed by high negative bias voltage, which induced the transition of h-BN to c-BN. It is unfavorable to the preparation of high quality layered h-BN films, and the proper hydrogen flow rate can balance the defects in h-BN, inhibit the transition from h-BN to c-BN, improve the stability of h-BN films and facilitate the preparation of high quality layered h-BN films. (2) nitrogen flow, negative bias voltage and hydrogen flow rate significantly affect the morphology and structure of BN films. The optimum sputtering conditions for high quality layered h-BN thin films on Si substrate are as follows: nitrogen flow rate is 12sccm, negative bias voltage is 0V, hydrogen flow rate is 12sccm. The annealing method is used to supplement the h-BN films with N and doped with H. However, annealing promotes the transition of h-BN from E-BN and w-BN to c-BN, and the transition from h-BN to c-BN is the most obvious at 900 鈩

本文编号：1818716