利用测量少子寿命再现低温多晶硅背板工艺

发布时间：2018-04-29 23:18

本文选题：少子寿命 + 低温多晶硅　；参考：《苏州大学》2015年硕士论文

【摘要】：随着科技的进步和人类对视觉享受追求的持续提升,AMOLED显示技术以其快速响应、高频率、低能耗、高PPI、超高色彩饱和度及超高对比度等优点将成为下阶段显示技术行业中的一颗璀璨的明星。本研究是利用激光波导测试的方法,研究AMOLED显示用背板的低温多晶硅载流子少子寿命同TFT特性、多晶硅晶粒大小、准分子激光结晶工艺条件和AMOLED显示器件之间的关系,从而开辟一条成本低、环境友好的快速反馈生产问题的新技术路线。(1)利用统计学计算方法对低温多晶硅载流子少子寿命测量体系进行计算分析。从理论上阐述低温多晶硅少子寿命测试的可行性和对比其他表征方法时所存在的问题及其解决方法。(2)根据理论计算分析结果,制定了相应的实验方案。采用准分子激光结晶的方法在不同工艺条件下生长低温多晶硅薄膜,对薄膜的子少子寿命、薄膜内多晶硅晶粒、薄膜制作的TFT半导体器件的载流子迁移率、阈值电压、亚阈值摆幅等进行规律性研究。研究了不同工艺条件下少子寿命对各半导体参数的影响。通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、半导体测试仪等分析方法对样品的物相、微观形貌、晶粒大小和分布进行表征。(3)研究结果表明:通过对低温多晶硅少子寿命的研究,其可以有效表征低温多晶硅TFT特性和AMOLED显示器件的均一性,进而指导准分子激光结晶工艺的效果和控制范围。同时探讨了不同工艺条件下晶粒大小、AFM结果的影响,总结出了激光能量在460-500mJ/cm2附近时结晶化的优化工艺条件,此时的微波反射信号稳定在500mV左右,波动最小。最终为工业化全自动大规模生产的反馈纠正体系研究工作提供实验数据和理论依据。
[Abstract]:With the development of science and technology and the continuous improvement of human's pursuit of visual enjoyment, AMOLED display technology with its rapid response, high frequency, low energy consumption, High PPI, ultra high color saturation and high contrast will become a bright star in the next stage of display technology industry. The relationship between minority carrier lifetime of low temperature polysilicon carrier and TFT, grain size of polysilicon, excimer laser crystallization conditions and AMOLED display device is studied by using the method of laser waveguide measurement. Therefore, a new technology route of low cost and environmental friendly fast feedback production problem is opened up. Statistical calculation method is used to calculate and analyze the low temperature polysilicon carrier minority carrier lifetime measurement system. The feasibility of low temperature polysilicon minority carrier lifetime test and the problems existing in comparison with other characterization methods and their solutions are described theoretically. (2) based on the theoretical calculation and analysis results, the corresponding experimental scheme is worked out. Low temperature polysilicon thin films were grown by excimer laser crystallization under different conditions. The carrier mobility, threshold voltage and carrier mobility of TFT semiconductor devices fabricated by the thin films were investigated, including the carrier minority carrier lifetime of the films, the polycrystalline silicon grains in the films, the carrier mobility and the threshold voltage of the TFT semiconductor devices fabricated by the films. The regularity of subthreshold amplitude swing was studied. The influence of minority carrier lifetime on the parameters of semiconductors under different technological conditions was studied. The phase, micromorphology, grain size and distribution of the samples were characterized by AFM, SEM and Semiconductor Tester. The results showed that the minority carrier lifetime of low temperature polysilicon was studied by means of atomic force microscope (AFM), scanning electron microscopy (SEM) and semiconductor tester. It can effectively characterize the TFT characteristics of low temperature polysilicon and the homogeneity of AMOLED display devices, and then guide the effect and control range of excimer laser crystallization process. At the same time, the influence of grain size on the results of 460-500mJ/cm2 was discussed, and the optimized process conditions of laser energy crystallization near 460-500mJ/cm2 were summarized. The microwave reflected signal was stable at 500mV and the fluctuation was the least. Finally, it provides experimental data and theoretical basis for the research of feedback correction system of industrial automatic mass production.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12

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