基于TD-LTE的GaAs HBT功率放大器及线性化技术研究

发布时间：2018-04-30 10:42

  本文选题：功率放大器 + GaAs　； 参考：《北京工业大学》2015年硕士论文

【摘要】：本文面向TD-LTE第四代移动通信业务,基于GaAs单片集成电路(MMIC)项目,设计了一款应用于手机等用户设备(UE)的功率放大器(PA)芯片。功率放大器使用Ga As HBT作为核心功率器件,通过两级放大实现高线性的设计要求。本文系统介绍了射频器件衬底材料体系,GaAs HBT器件模型理论、建模方法,工艺线工艺设计套件(PDK),并以WIN HBT工艺参数使用ADS制作了一个KIT的样本。通过对PA的线性化技术的分析,最终设计了适用于芯片级PA的自适应偏置电路,在进一步稳定了PA的输入偏置电流的同时,抑制了HBT因增益压缩、温漂等现象引起的失真,提高了PA的线性性能;并在设计中将PA第一级放大器设计为预失真模块,第二级放大器作为主放大模块,最终将PA的ACPR改善了17dB。在设计过程中,对每一个HBT使用了RC并联稳定网络,并分析了其稳定性能;使用估算和仿真结合的方法选取了适当数量的HBT作为两级放大的功率管芯;第二级放大器使用了Load-pull技术实现了最大功率匹配以提高PA的输出功率,而第一级作为驱动级采用了共轭匹配的方法产生最大增益。为产生更低的匹配损耗,重新仿真设计了匹配用的无源电感。最后使用ADS Momentum 2.5D电磁仿真工具对版图进行电磁仿真,并采用联合仿真的方法确定版图后的PA性能。考虑了工艺误差,最后设计得到的PA为通信Band 41频段,中心频率f0为2.6GHz,增益大于等于31d B,1d B功率压缩点功率为30d Bm,邻信道功率比ACPR(5MHz)、功率附加效率PAE在输出功率29dBm时分别为-41dBc和46%。
[Abstract]:For the fourth generation mobile communication service of TD-LTE, based on the GaAs monolithic integrated circuit (GaAs) project, this paper designs a power amplifier chip for mobile phone and so on. GaAs HBT is used as the core power device in power amplifier. This paper systematically introduces the model theory, modeling method and process line process design kit of HBT devices based on the substrate material system of RF devices. A sample of KIT is made by using the WIN HBT process parameters using ADS. By analyzing the linearization technology of PA, an adaptive bias circuit suitable for chip PA is designed, which can further stabilize the input bias current of PA and restrain the distortion caused by gain compression and temperature drift in HBT. The linear performance of PA is improved, and the PA first stage amplifier is designed as a predistortion module and the second stage amplifier is used as the main amplifier module. Finally, the ACPR of PA is improved by 17 dB. In the design process, the RC parallel stable network is used for each HBT, and its stability performance is analyzed, and an appropriate number of HBT is selected as the two-stage amplifier power core using the method of estimation and simulation. The second stage amplifier uses Load-pull technology to realize the maximum power matching to improve the output power of PA, while the first stage uses conjugate matching as the driving stage to generate the maximum gain. In order to reduce the matching loss, the passive inductor for matching is redesigned. Finally, the ADS Momentum 2.5D electromagnetic simulation tool is used to simulate the layout, and the joint simulation method is used to determine the PA performance after the layout. Considering the process error, the PA is a communication Band 41 band, the center frequency f _ 0 is 2.6 GHz, the gain is more than or equal to 31dB ~ (-1) dB power compression point power is 30dBm, the adjacent channel power ratio is ACPR ~ (5) MHz ~ (z), and the power additional efficiency PAE is -41dBc and 46dB when the output power 29dBm is obtained, respectively.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
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本文编号：1824241