深空探测X波段低噪声放大器的研究与制作

发布时间：2018-05-03 15:09

本文选题：单片微波集成电路 + X波段　；参考：《南京邮电大学》2017年硕士论文

【摘要】：作为微波接收系统中至关重要的前端单元模块,低噪声放大器的性能决定了整个接收机的噪声、灵敏度及动态范围。为满足微波接收系统小型化、高性能指标的要求,具有低噪声、高增益及良好端口匹配等优异性能的单片微波集成电路低噪声放大器的设计一直是该方向的一个热点课题。本课题主要结合高性能深空探测专用X波段接收机的项目需求,进行了X波段低噪声放大器芯片的设计研究工作。采用0.15μm GaAs pHEMT工艺,设计、制作并测试了一款基于MMIC技术的3-15GHz超宽带低噪声放大器芯片,实现了超宽带内具有优秀的回波损耗和平坦的高增益的要求。电路设计采用了四级放大、RC负反馈匹配及源极电感负反馈等方法,有效的增强了电路的稳定性,拓展了输入匹配带宽,改善了级间匹配,提高了带内增益及增益平坦度。所研制的低噪声放大器芯片面积为2 mm×1 mm,在片测试结果为3-15GHz内平均增益31dB,最大增益达到34.8dB,噪声系数优于2.5dB,有最小噪声系数1.5dB,输入输出回波损耗均大于10dB,与仿真结果十分吻合。尤其是在8.0~10.0GHz内噪声系数低于2dB,输入回波损耗大于19dB,输出回波损耗大于16dB,优于设计目标。从测试结果可以看出,该放大器在宽带3-15GHz内满足绝对稳定条件,具有平坦的高增益、良好的输入和输出匹配及较低的噪声系数,性能优异,满足技术指标,符合设计要求,可用于S、C、X、Ku波段外差接收机或毫米波亚毫米波接收机中频模块中的信号放大。
[Abstract]:As a very important front-end module in microwave receiving system, the performance of LNA determines the noise, sensitivity and dynamic range of the whole receiver. In order to meet the requirement of miniaturization and high performance of microwave receiving system, the design of monolithic microwave integrated circuit low noise amplifier with low noise, high gain and good port matching has been a hot topic in this direction. According to the requirement of X band receiver for high performance deep space exploration, the design of X band low noise amplifier chip is carried out. A 3-15GHz ultra-wideband low noise amplifier chip based on MMIC technology is designed, fabricated and tested using 0.15 渭 m GaAs pHEMT technology. It realizes the requirement of excellent echo loss and flat high gain in UWB. The design of the circuit adopts four amplifier RC negative feedback matching and source inductor negative feedback, which effectively enhances the stability of the circuit, expands the input matching bandwidth, improves the inter-stage matching, and improves the in-band gain and gain flatness. The chip area of the low noise amplifier is 2 mm 脳 1 mm. The average gain in 3-15GHz is 31 dB, the maximum gain is 34.8 dB, the noise coefficient is better than 2.5 dB, the minimum noise coefficient is 1.5 dB, and the input and output echo loss is more than 10 dB, which is in good agreement with the simulation results. Especially in 8.0~10.0GHz, the noise coefficient is lower than 2 dB, the input echo loss is greater than 19 dB, and the output echo loss is more than 16 dB, which is better than the design goal. From the test results, it can be seen that the amplifier satisfies the absolute stability condition in the broadband 3-15GHz, has flat high gain, good input and output matching and low noise coefficient, excellent performance, meets the technical specifications and meets the design requirements. It can be used to amplify the signal in the if module of the XKU heterodyne receiver or millimeter-wave sub-millimeter wave receiver.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.3

【参考文献】