石墨烯晶体管转移特性对栅压的依赖现象研究

发布时间：2018-05-04 04:41

本文选题：石墨烯晶体管 + 转移特性　；参考：《微电子学与计算机》2017年06期

【摘要】：为了研究石墨烯场效应晶体管的不同测试方法,对其转移特性的影响,在栅压为0~5V之间扫描的情况下,研究了石墨烯晶体管的狄拉克点变化规律.其变化呈现以下特点:连续地正向扫描或反向扫描时,随着次数的增加,狄拉克点电压逐渐变大;先加栅压保持一段时间后,再测转移特性,0V保持时,狄拉克点电压不变,5V保持时,狄拉克点电压变大;测试之间相互独立时,正向扫描的狄拉克点电压小于反向扫描的狄拉克点电压;双向连续扫描时,第一次测试影响第二次的结果.以上现象表明了狄拉克点电压的大小和已扫描过的栅压大小有关.我们把上述的特点归因于电子注入到氧化铪表面的陷阱中.这些现象的发现和解释对石墨烯器件的可靠性,石墨烯导电特性的控制,石墨烯电路的实现有明显的参考意义.
[Abstract]:In order to study the effect of different testing methods on the transfer characteristics of graphene field effect transistors, the Dirac point variation law of graphene transistors was studied at a gate voltage of 0 ~ 5 V. The changes show the following characteristics: the Dirac point voltage increases with the increase of the number of times during continuous forward or reverse scanning, and when the gate voltage is kept for a period of time, and then the transfer characteristic is kept at 0 V, When the Dirac point voltage remains unchanged, the Dirac point voltage increases; when the test is independent of each other, the Dirac point voltage in the forward scan is smaller than the Dirac point voltage in the reverse scan; in the bidirectional continuous scanning, the Dirac point voltage is smaller than the Dirac point voltage in the reverse scan. The first test affected the second result. The above phenomena indicate that the Dirac point voltage is related to the scanned gate voltage. We attribute these characteristics to the traps in which electrons are injected into the surface of hafnium oxide. The discovery and explanation of these phenomena are of great significance to the reliability of graphene devices, the control of graphene conductivity and the realization of graphene circuits.
【作者单位】：电子科技大学电子薄膜与集成器件国家重点实验室;
【基金】：国家自然科学基金项目(61404021)
【分类号】：TN386

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