影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究

发布时间：2018-05-05 15:58

本文选题：碳化硅 + 化学机械抛光　；参考：《人工晶体学报》2017年05期

【摘要】：选用二氧化硅抛光液抛光4H导电SiC晶片表面,探究影响SiC晶片表面质量的关键参数,获得更高的去除效率和表面质量。实验结果表明,SiC表面的氧化是氢氧根离子和双氧水共同作用的结果。保持压力不变并增加氢氧根离子或双氧水的含量,SiC表面去除速率先增加后保持不变。在更大的压力下增加氢氧根离子的含量,SiC表面的抛光去除速率进一步增加。通过优化的抛光参数,SiC表面的抛光去除速率达到142 nm/h。进一步研究结果表明,保持化学机械抛光过程中氧化作用与机械作用相匹配,是获得高抛光效率和良好的表面质量的关键。表面缺陷检测仪(Candela)和原子力显微镜(AFM)的测试结果表明,SiC抛光片表面无划痕,粗糙度达到0.06 nm。外延后总缺陷密度小于1个/cm2,粗糙度达到0.16 nm。
[Abstract]:The surface of 4H conductive SiC wafer was polished by using silicon dioxide polishing liquid, and the key parameters affecting the surface quality of SiC wafer were investigated to obtain higher removal efficiency and surface quality. The results show that the oxidation of sic surface is the result of the interaction of hydrogen hydroxide ion and hydrogen peroxide. Keeping the pressure constant and increasing the content of hydroxide ion or hydrogen peroxide the removal rate of sic surface firstly increases and then remains unchanged. The removal rate of sic surface was further increased by increasing the content of hydroxide ions under higher pressure. The removal rate of sic surface is up to 142 nm / h by optimizing polishing parameters. The further research results show that keeping the oxidation and mechanical action matching in the process of chemical-mechanical polishing is the key to obtain high polishing efficiency and good surface quality. The results of surface defect detector Candela and AFM) show that there is no scratch on the surface of sic polishing wafer and the roughness is 0.06 nm. The total defect density is less than 1 / cm ~ 2 and the roughness is 0.16 nm.
【作者单位】：北京天科合达半导体股份有限公司;新疆天富能源股份有限公司;新疆天科合达蓝光半导体有限公司;北京科技大学;
【基金】：国家科技部高技术研究发展计划“863计划”(2014AA041402) 北京市科技新星计划项目(Z141103001814088) 新疆兵团重点领域创新团队计划
【分类号】：TN305.2

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