基于模拟退火的三维集成电路水冷散热网络优化算法

发布时间：2018-05-07 00:12

本文选题：三维芯片 + 水冷散热　；参考：《复旦学报(自然科学版)》2017年04期

【摘要】：三维集成电路(3D-IC)通过在垂直方向堆叠多层芯片有效提高了芯片的性能和集成度.然而,过高的功率密度和温度成为3D-IC集成度提高的最大障碍.水冷散热技术将冷却液注入两层芯片间的沟道有效解决了3D-IC的散热问题,同时也带来了过高温度梯度的问题以及对散热功耗,芯片可靠性的要求.本文提出一种在有硅穿孔限制下的基于模拟退火的沟道网络优化算法,算法基于温度仿真,对散热沟道进行放置与填充操作,设计出的沟道网络可以有效降低散热功率和温度梯度.实验中,与传统的均匀直沟道的设计方法相比,我们的方法可以在相同最高温和温度梯度限制条件下,降低散热功率达67.0%.
[Abstract]:Three dimensional integrated circuits (3D-IC) can effectively improve the performance and integration of the chip by stacking the multilayer chips in the vertical direction. However, the high power density and temperature become the biggest obstacle to the improvement of the 3D-IC integration. The water cooled cooling technology inject the coolant into the two layer channel channel to solve the heat dissipation problem of the 3D-IC, and also bring about the heat dissipation of the chip. The problem of high temperature gradient and the demand for heat dissipation and reliability of the chip are required. In this paper, a channel network optimization algorithm based on simulated annealing is proposed under the restriction of silicon perforation. The algorithm is based on temperature simulation to place and fill the heat sink channel. The design of channel network can effectively reduce the heat dissipation power and temperature. In the experiment, compared with the traditional uniform straight channel design method, our method can reduce the heat dissipation power of 67.0%. at the same maximum temperature and temperature gradient.

【作者单位】：复旦大学专用集成电路与系统国家重点实验室;
【基金】：国家自然科学基金(61376040)
【分类号】：TN40

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