4H-SiC MESFET特性对比及仿真

发布时间：2018-05-07 02:40

本文选题：仿真 + H-SiC　；参考：《电子技术应用》2017年01期

【摘要】：通过对双凹栅结构和阶梯栅结构4H-SiC MESFET的直流特性对比,得出阶梯栅结构的直流特性优于双凹栅结构。对阶梯栅结构进行极限化处理后,引出了坡形栅4H-SiC MESFET的结构及其特征参数EP_(CG),通过仿真对比了坡形栅4H-SiC MESFET结构EP_(CG)分别为1/4栅、1/2栅、3/4栅和全栅时的直流特性。结果表明,当EP_(CG)为1/2栅时,最大饱和漏电流取得最大值,在V_G=0 V、V_(DS)=40 V的条件下达到了545 mA;当EPCG为1/4栅、3/4栅和全栅时,最大饱和漏电流均不如EP_(CG)为1/2栅时取得的最大值。
[Abstract]:By comparing the DC characteristics of double concave gate structure and step gate structure 4H-SiC MESFET, it is concluded that the DC characteristic of step gate structure is better than that of double concave gate structure. After limiting the step gate structure, the structure and characteristic parameters of the slope gate 4H-SiC MESFET are derived. The DC characteristics of the slope gate 4H-SiC MESFET structure are compared when the 4H-SiC MESFET structure is 1 / 4 gate / 2 gate / 3 / 4 gate and full gate respectively. The results show that the maximum saturated leakage current reaches 545mAat 40 V at V_G=0 V / V, and when EPCG is 1 / 4 gate 3 / 4 gate and full gate, the maximum saturated leakage current is lower than that obtained at 1 / 2 gate when EPCG is 1 / 2 gate, and the maximum saturated leakage current is less than that at 1 / 2 gate when EPCG is 1 / 4 gate and 3 / 4 gate with EPCG of 1 / 4 gate.
【作者单位】：航天科技集团九院七七一研究所;
【分类号】：TN386

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