频率对半导体器件热击穿影响的理论模型

发布时间：2018-05-07 10:39

本文选题：热击穿 + 频率　；参考：《物理学报》2017年01期

【摘要】：针对半导体器件中的热击穿,通过分析已有的理论模型,把频率对器件热区热产生和热传导的影响引入理论模型.利用格林函数求解热传输方程,同时对余误差函数进行近似处理,求解得到热区温度以及器件烧毁功率与频率和脉冲宽度的表达式.通过数值分析,求解得到不同频率下器件烧毁功率随脉冲宽度的变化规律以及不同脉冲宽度下器件烧毁功率随频率的变化规律,同时给出了频率对器件烧毁功率影响的物理解释.
[Abstract]:In view of thermal breakdown in semiconductor devices, the influence of frequency on the thermal generation and conduction of semiconductor devices is introduced by analyzing the existing theoretical models. The Green's function is used to solve the heat transfer equation and the residual error function is approximated to obtain the expressions of the heat region temperature, the device burnout power, the frequency and the pulse width. Through numerical analysis, the variation of device burnout power with pulse width at different frequencies and the variation law of device burning power with frequency under different pulse widths are obtained. At the same time, the physical explanation of the influence of frequency on the device burnout power is given.
【作者单位】：西北核技术研究所高功率微波技术重点实验室;
【分类号】：TN303

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