基于BiCMOS工艺可修调的高精度低温度系数带隙基准源设计

发布时间：2018-05-08 13:20

  本文选题：温度传感器芯片 + 带隙基准　； 参考：《传感技术学报》2017年05期

【摘要】：设计了一种利用电阻比值校正一阶温度系数带隙基准电路的非线性温度特性来实现低温度系数的高精度低温度系数带隙基准源;同时设置了修调电路提高基准电压的输出精度。该带隙基准源采用0.8μm Bi CMOS(Bipolar-CMOS)工艺进行流片,带隙基准电路所占面积大小为0.04 mm~2。测试结果表明:在5 V电源电压下,在温度-40℃~125℃范围内,基准电压的温度系数为1.2×10~(-5)/℃,基准电流的温度系数为3.77×10~(-4)/℃;电源电压在4.0 V~7.0 V之间变化时,基准电压的变化量为0.4 m V,电源调整率为0.13 m V/V;基准电流的变化量为变化量约为0.02μA,电源调整率为6.7 n A/V。
[Abstract]:A high precision and low temperature coefficient bandgap reference source with low temperature coefficient is designed by using resistance ratio to correct the nonlinear temperature characteristics of the first order temperature coefficient bandgap reference circuit, and the output precision of the reference voltage is improved by setting a modified adjusting circuit. The bandgap reference is fabricated by 0.8 渭 m BiCMOS- Bipolar-CMOS process. The area of the band-gap reference circuit is 0.04 mm / 2. The test results show that the temperature coefficient of reference voltage is 1.2 脳 10 ~ (-5) / 鈩，

本文编号：1861563