半导体激光器与光硅通孔耦合特性的研究

发布时间：2018-05-08 23:32

本文选题：光硅通孔 + 3D集成电路　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：在信息大爆炸的今天,数据传输正朝着容量大、速度快和损耗低的方向发展,传统意义上的电互连已经无法满足用户日益增长的需求,这就促使了光通信互连技术的产生。并且紧跟着集成电路各项技术的发展,电路的集成度越来越高,晶体管的最小特征尺寸也越来越小,它们一直遵循着摩尔定律在不断进步。但是当晶体管的特征尺寸减小到纳米量级后,其基本已经达到物理极限,要继续提升电路性能就得从其他方面来着手。目前认为三维(3D)集成电路是未来的发展方向,而其中的硅通孔技术是实现电路三维集成的关键。当前主要是在通孔中传输电信号,尽管能够提高电路的性能,但也有其局限性,人们将眼光投向了光互连与三维集成电路结合起来的三维光电混合集成电路,使得光信号能够在硅通孔中传输。本文就是基于此种研究背景,主要开展激光器与光硅通孔的耦合特性研究。论文首先根据光硅通孔与光波导的相似性,利用光波导的相关理论对光硅通孔进行理论分析,得到了其中的模场分布。然后通过对半导体激光器的模场和光硅通孔基模模场进行了高斯模场分布近似,根据模式耦合理论,利用半导体激光器发出光束的模场与光硅通孔的基模模场在快慢轴方向上的重叠积分,得到半导体激光器与光硅通孔的耦合效率公式。在高斯模场分布近似的前提下,结合半导体激光器产生的椭圆形光束的特殊性质,从模场半径匹配和相位匹配的角度,描述了半导体激光器与光硅通孔之间的光耦合理论,并分析了不同传播距离、横向位置偏差以及角向偏差等因素对耦合效率的影响,还利用Rsoft软件进行了整体的建模与仿真验证,证明了理论分析的正确性。最后从模场匹配的角度,提出两种提高耦合效率的方法,一种是改变半导体激光器结构,另外一种是在激光器与硅通孔之间加入光学元件来改变耦合方式。
[Abstract]:With the information explosion, data transmission is developing towards the direction of large capacity, high speed and low loss. The traditional electrical interconnection can not meet the increasing needs of users, which promotes the generation of optical communication interconnection technology. With the development of integrated circuit technology, the integration of circuits becomes higher and higher, and the minimum characteristic size of transistors becomes smaller and smaller. However, when the characteristic size of transistors is reduced to nanoscale, it has basically reached the physical limit. To continue to improve circuit performance, we have to start from other aspects. At present, it is considered that 3D integrated circuit is the development direction in the future, and the silicon through hole technology is the key to realize the 3D integration of the circuit. At present, it is mainly to transmit electrical signals in the through hole. Although it can improve the performance of the circuit, it also has its limitations. People have turned their eyes to the three-dimensional optoelectronic hybrid integrated circuit, which combines optical interconnection with three-dimensional integrated circuit. The optical signal can be transmitted through the silicon hole. Based on this kind of research background, the coupling characteristics of laser and optical-silicon through hole are studied in this paper. Firstly, according to the similarity between the optical silicon through hole and the optical waveguide, the theoretical analysis of the optical silicon through hole is carried out by using the optical waveguide theory, and the mode field distribution of the optical silicon through hole is obtained. Then the mode field of semiconductor laser and the fundamental mode field of optical silicon pass hole are approximated by Gao Si mode field, according to the mode coupling theory, Based on the overlapping integration of the mode field of the laser beam and the fundamental mode field of the optical silicon through hole in the direction of the fast and slow axis, the coupling efficiency formula between the semiconductor laser and the optical silicon through hole is obtained. On the premise of the approximate mode field distribution of Gao Si, combined with the special properties of elliptical beam produced by semiconductor laser, the optical coupling theory between semiconductor laser and optical silicon through hole is described from the angle of mode field radius matching and phase matching. The effects of different propagation distance, lateral position deviation and angular deviation on the coupling efficiency are analyzed. The whole modeling and simulation are also carried out by using Rsoft software, which proves the correctness of the theoretical analysis. Finally, from the angle of mode field matching, two methods are proposed to improve the coupling efficiency: one is to change the structure of semiconductor lasers, the other is to add optical elements between the laser and the silicon through hole to change the coupling mode.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248.4

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