不同插入层对抑制Mg掺杂p-GaN的记忆效应

发布时间：2018-05-09 00:20

本文选题：记忆效应 + p-GaN　；参考：《半导体技术》2017年10期

【摘要】：研究了低温(LT)GaN和AlN不同插入层对抑制Mg掺杂p-GaN金属有机化学气相沉积外延中存在的记忆效应的影响,外延生长p-GaN缓冲层,制作具有该缓冲层的Al GaN/GaN高电子迁移率晶体管(HEMT),并对该器件进行电学测试。二次离子质谱仪测试表明p-GaN上10 nm厚的LT-GaN插入层相比于2 nm厚的AlN插入层能更好地抑制Mg扩散。霍尔测试表明,2 nm厚的AlN插入层的引入和GaN存在较大的晶格失配会引入位错,进而会降低Al GaN/GaN HEMT的电子迁移率以及增加其方块电阻;含有10 nm厚的LT-GaN插入层的p-GaN作为缓冲层的Al GaN/GaN HEMT,其方块电阻、电子迁移率以及二维电子气(2DEG)密度分别为334.9Ω/,1 923 cm~2/(V·s)和9.68×1012cm~(-2)。器件具有很好的直流特性,其饱和电流为470 mA/mm,峰值跨导为57.7 m S/mm,电流开关比为3.13×10~9。
[Abstract]:The effect of different insertion layers of LT-GaN and AlN on the memory effect of Mg-doped p-GaN metal organic chemical vapor deposition epitaxy was studied. The p-GaN buffer layer was grown by epitaxial growth. The Al GaN/GaN high electron mobility transistor with this buffer layer is fabricated and the device is tested by electrical test. The results of secondary ion mass spectrometer show that the LT-GaN intercalation layer with 10 nm thickness on p-GaN can restrain mg diffusion better than that of AlN with 2 nm thickness. Hall measurements show that the introduction of AlN intercalation layer with thickness of 2 nm and the existence of large lattice mismatch in GaN will lead to dislocation, which will decrease the electron mobility of Al GaN/GaN HEMT and increase its square resistance. The sheet resistance, electron mobility and two-dimensional electron gas 2DEG densities of Al GaN/GaN HEMTs with p-GaN as buffer layer are 334.9 惟 / 1 923 cm~2/(V / s and 9.68 脳 10 12 cm ~ (-1) 路m ~ (-2) 路m ~ (-1) 路min ~ (-1) ~ (-1) 路min ~ (-1) 路m ~ (-1), respectively. The device has good DC characteristics, the saturation current is 470 Ma / mm, the peak transconductance is 57.7 Ms / mm, and the current-switching ratio is 3.13 脳 10 ~ (-9) mm.
【作者单位】：苏州工业园区服务外包职业学院;中国科学院苏州纳米技术与纳米仿生研究所;华中科技大学武汉光电国家实验室;
【基金】：国家自然科学基金青年科学基金资助项目(11404372) 江苏省重点研发计划资助项目(BE2016084) 2017年江苏省高职院校教师专业带头人高端研修资助项目(2017GRGDYX041)
【分类号】：TN386

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