一种基于130 nm CMOS工艺的K波段混频器

发布时间：2018-05-11 23:37

本文选题：K波段 + 下变频　；参考：《微电子学》2017年04期

【摘要】：基于130 nm CMOS工艺,设计了工作于K波段的双平衡下变频混频器。在传统吉尔伯特单元基础上采用电流复用注入结构,减小了开关级的偏置电流,提升了开关性能。在开关级源端引入谐振电感,消除了开关共源节点处的寄生电容,抑制了射频信号的泄露,提高了增益,减小了噪声。仿真结果表明,输入射频信号为24 GHz,本振信号为24.5 GHz,本振输入功率为-3 d Bm时,该混频器的转换增益为25.8 d B,单边带噪声系数为6.4 d B,输入3阶互调截点为-8.6 d Bm。
[Abstract]:Based on 130nm CMOS process, a K band dual balanced downconversion mixer is designed. Based on the traditional Gilbert cell, the current multiplexing injection structure is adopted, which reduces the bias current at the switch level and improves the switching performance. The resonant inductance is introduced at the switch level, which eliminates the parasitic capacitance at the common source node, restrains the leakage of the RF signal, improves the gain and reduces the noise. The simulation results show that when the input RF signal is 24 GHz, the local oscillator signal is 24.5 GHz, and the local oscillator input power is 3 dBm, the conversion gain of the mixer is 25.8 dB, the single sideband noise coefficient is 6.4 dB, and the input third order Intermodulation intercept point is -8.6 dBm.
【作者单位】：武汉大学物理科学与技术学院;
【基金】：国家自然科学基金资助项目(61204096,61404094) 中国博士后科学基金资助项目(2012T50688) 中央高校基本科研资助项目(2042015kf0174,2042014kf0238) 湖北省自然科学基金资助项目(2014CFB694) 江苏省科学基金资助项目(BK20141218)
【分类号】：TN773

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