ICP工艺参数对刻蚀Pyrex玻璃影响的实验研究（英文）

发布时间：2018-05-12 08:59

本文选题：感应耦合等离子刻蚀 + Pyrex玻璃　；参考：《传感技术学报》2016年08期

【摘要】：影响ICP刻蚀的工艺参数包括反应室压力,偏置射频功率,氩气流量比率。通过正交试验的方法,以CHF3和Ar的混合物作为反应气体,利用电感耦合等离子体技术刻蚀Pyrex玻璃。并采用回归分析方法建立了二次回归方程模型描述腐蚀速率和三个因素之间的关系。实验结果表明,氩气的流量比率(总气体流量(CHF3+Ar)是恒定的)对刻蚀速率的影响最大,影响程度的主次顺序为氩气的流量比率,反应室压力,偏置射频功率。腐蚀速率和三个因素之间的数学表达式为:腐蚀速率=532.680 0+2.055 6×Ar+0.012 7×(偏置射频功率)-0.964 1×压力-0.065 5×Ar2-0.006 7×Ar×(偏置射频功率)+0.021 7×(偏置射频功率)×压力-0.050 4×(压力)2,实验结果证明数学拟合结果良好。
[Abstract]:The process parameters affecting ICP etching include reaction chamber pressure, bias RF power and argon flow ratio. The Pyrex glass was etched by inductively coupled plasma with the mixture of CHF3 and ar as reaction gas by orthogonal test. A quadratic regression equation model was established to describe the relationship between corrosion rate and three factors. The experimental results show that the influence of argon flow ratio (CHF _ 3 Ars) on etching rate is the greatest, and the order of influence is ar flow ratio, reaction chamber pressure and bias RF power. The mathematical expression between the corrosion rate and the three factors is as follows: corrosion rate 532.680 2.055 6 脳 ar 0.012 7 脳 (bias radio frequency power n -0.964 1 脳 pressure -0.065 5 脳 Ar2-0.006 7 脳 ar 脳 (bias RF power) 0.021 7 脳 (bias RF power) 脳 pressure -0.0504 脳 (pressure 2.02). The result of Ming mathematics fitting is good.
【作者单位】：中北大学仪器科学与动态测试教育部重点实验室;中北大学电子测试技术国防科技重点实验室;
【基金】：National Science Foundation for Distinguished Young Scholars of China(51425505)
【分类号】：TN305.7

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