热丝CVD法沉积超薄α-Si∶H钝化膜

发布时间：2018-05-13 05:17

本文选题：热丝化学气相沉积(HWCVD) + 介电常数　；参考：《半导体技术》2017年05期

【摘要】：采用热丝化学气相沉积法在n型直拉单晶硅圆片表面双面沉积厚度为10 nm的本征非晶硅(α-Si∶H)薄膜。利用光谱型椭偏测试仪和准稳态光电导法研究热丝电流、H_2体积流量和热丝与衬底之间的距离对α-Si∶H薄膜结构和钝化效果的影响。结果表明,热丝电流为21.5~23.5 A时,钝化后硅片的少子寿命随着热丝电流的增加呈现先增加后降低的趋势,热丝电流为23.0 A时,钝化效果最好;H_2体积流量为5~20 cm~3/min时,少子寿命随着H_2体积流量的增加呈现先增加后降低的规律,体积流量为15 cm~3/min时,钝化效果最好;热丝与衬底间距为4~5 cm时,随着间距的增加,薄膜的结构由晶化向非晶化转变,在间距为4.5 cm时硅片的钝化效果达到最优。
[Abstract]:伪 -Si: h films with a thickness of 10 nm were deposited on the surface of n-type Czochralski wafer by hot filament chemical vapor deposition. The effects of the volume flow rate of hot filament current and the distance between hot filament and substrate on the structure and passivation effect of 伪 -Si: h thin film were studied by spectroscopic ellipsometry and quasi-steady state photoconductivity method. The results show that the minority carrier lifetime of passivated silicon wafer increases first and then decreases with the increase of hot filament current when the hot filament current is 21.5 ~ 23.5 A. when the hot filament current is 23.0 A, the passivating effect is best when the volume flow rate of H2 is 520 cm~3/min. The minority carrier lifetime increases first and then decreases with the increase of volume flow rate of H2. When the volume flow rate is 15 cm~3/min, the passivation effect is the best, and the structure of thin films changes from crystallization to non-crystallization when the distance between hot filament and substrate is 4 ~ 5 cm. When the distance is 4.5 cm, the passivation effect of silicon wafer is optimal.
【作者单位】：南昌大学光伏研究院;
【基金】：国家自然科学基金资助项目(61306084,61464007,51561022) 江苏省能量转换材料与技术重点实验室开放课题基金资助项目(NJ20160032) 江西省重点研发计划-技术引进与合作研究-重点项目(2016BBH80043)
【分类号】：TN304.055

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