压接式IGBT封装技术研究

发布时间：2018-05-15 18:48

本文选题：压接式IGBT + 封装　；参考：《华北电力大学(北京)》2017年硕士论文

【摘要】：压接式IGBT模块具有通流能力大、无焊接点、无引线、低热阻、失效短路等特点,可广泛的应用于高压直流输电系统、铁路牵引、风力发电、高压大功率工业装备驱动等诸多领域。压接式IGBT模块在封装结构上与焊接式IGBT模块存在的差异使得压接式IGBT模块的封装工艺和实现方式上也完全不同于焊接式IGBT模块。本文首先以压接式IGBT样管为基础,通过Comsol仿真介绍了器件在无公差下力场和热力耦合后器件的受力分布,并着重分析芯片在两个物理场形变、应力、接触压力的变化过程;通过ANSYS仿真介绍了器件在压力场下不同公差组件对芯片接触压力的影响,并得出在外圈子模组大钼片增高6μm下,中心芯片接触压力为0N。为了提高器件内部压力一致性,需要求器件封装后整体公差在6μm以内。其次,压接式IGBT组件较多,由组件间各个接触层引入的接触热阻占器件整体热阻比重较大。因此,降低器件接触热阻对器件散热非常关键。本文通过应用纳米银烧结技术对芯片和大钼片烧结,并通过热阻测试验证了烧结减少器件热阻的有效性。将测试条件设为仿真边界,通过Comsol仿真得到每个接触层的接触热阻大小。最后,对比器件在不同结构下芯片接触压力的分布,提出一种提高芯片均压的方法,并通过仿真得以验证。
[Abstract]:Pressure-connected IGBT module has the characteristics of large current transmission capacity, no welding point, no lead, low thermal resistance, failure and short circuit. It can be widely used in HVDC transmission system, railway traction, wind power generation, etc. High-voltage and high-power industrial equipment drive and many other fields. Because of the difference between the encapsulation structure of the IGBT module and the IGBT module, the encapsulation technology and implementation of the IGBT module are completely different from that of the IGBT module. In this paper, based on the pressure-bonded IGBT tube, the mechanical distribution of the device under the coupling of force field and thermodynamics without tolerance is introduced by Comsol simulation, and the variation process of the chip deformation, stress and contact pressure in the two physical fields is analyzed emphatically. The influence of different tolerance components on the contact pressure of the chip is introduced by ANSYS simulation. It is concluded that the contact pressure of the central chip is 0 Nwhen the large molybdenum sheet of the outer circle module increases 6 渭 m. In order to improve the internal pressure consistency of the device, it is necessary to obtain the overall tolerance of the device within 6 渭 m. Secondly, there are many IGBT components, and the contact thermal resistance introduced by the different contact layers of the components accounts for a large proportion of the overall thermal resistance of the device. Therefore, reducing the contact thermal resistance of the device is very important to the heat dissipation of the device. In this paper, nano-silver sintering technology was used to sintered chips and molybdenum chips, and the effectiveness of sintering to reduce the thermal resistance of the devices was verified by thermal resistance test. The test condition is set as the simulation boundary and the contact thermal resistance of each contact layer is obtained by Comsol simulation. Finally, by comparing the distribution of the chip contact pressure in different structures, a method to increase the average voltage of the chip is proposed and verified by simulation.
【学位授予单位】：华北电力大学(北京)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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