GCT电路仿真模型的建立与验证

发布时间：2018-05-16 06:09

本文选题：门极换流晶闸管 + 模型　；参考：《西安理工大学》2017年硕士论文

【摘要】：集成门极换流晶闸管(IGCT)是在门极可关断晶闸管(GTO)的基础上发展而来的一种大功率电力半导体器件。在中高压电力电子装置及大功率领域具有很好的应用前景。为了拓宽IGCT的应用范围,需要建立一种能准确表征其开关特性的电路仿真模型。本文根据GCT的结构特点与工作原理,提出了一种GCT的M-2T-3R等效电路模型。以4.5kV/4kA的非对称IGCT为例,利用Cadence-Pspice仿真软件研究了 GCT的开关特性,分析了模型参数和门极寄生电感对GCT开关特性的影响,并通过与器件数值分析结果对比,验证了 GCT电路仿真模型的准确性和适用性。主要研究内容如下:首先,简要介绍了 GCT的结构特点及工作原理,根据GCT内部换流过程和双晶体管模型,在GCT门-阴极间引入MOSFET,提出了 GCT单元的M-2T-3R等效电路模型。第二,分析了 GCT多阴极并联结构的特点,将GCT阴极环数等效为并联单元个数,建立了 GCT的M-2T-3R电路仿真模型,确定了模型中PNP晶体管与NPN晶体管的电流放大系数、渡越时间、偏置电容,以及GCT的静态电阻和内部分布电感等模型参数值,分析了关键模型参数对器件开关特性的影响。第三,分析了 M-2T-3R电路仿真模型的准确性和适用性。通过将4.5kV/4kAIGCT的电路模型仿真结果与器件数值分析结果、实测波形及应用手册中的性能指标等进行对比,其关键特性参数基本满足指标要求,表明该模型能较准确地表征GCT的换流过程及开关特性;并将该电路仿真模型分别用于4.5kV/3.6kA和4.5kV/2.2kA系列IGCT,其开关特性仿真曲线与器件数值分析的结果也基本一致,说明该模型可适用于不同电流等级的IGCT。本文建立的GCT电路仿真模型可用于IGCT的驱动与保护电路的设计及应用系统的仿真研究。
[Abstract]:Integrated gate commutation thyristor (IGCTT) is a kind of high-power semiconductor device developed on the basis of gate turn-off thyristor (GTOT). It has a good application prospect in the field of medium and high voltage power electronic devices and high power. In order to widen the application range of IGCT, it is necessary to establish a circuit simulation model which can accurately characterize its switching characteristics. According to the structure and working principle of GCT, a M-2T-3R equivalent circuit model of GCT is presented in this paper. Taking asymmetric IGCT of 4.5kV/4kA as an example, the switching characteristics of GCT are studied by using Cadence-Pspice simulation software. The effects of model parameters and gate parasitic inductors on the switching characteristics of GCT are analyzed, and the results are compared with the results of numerical analysis. The veracity and applicability of GCT circuit simulation model are verified. The main research contents are as follows: firstly, the structure and working principle of GCT are briefly introduced. According to the internal commutation process of GCT and the model of double transistor, MOSFETs are introduced between GCT gate and cathode, and the M-2T-3R equivalent circuit model of GCT cell is proposed. Secondly, the characteristics of GCT multi-cathode parallel structure are analyzed, the number of GCT cathode rings is equivalent to the number of parallel units, the M-2T-3R circuit simulation model of GCT is established, and the current magnification factor and transit time of PNP transistor and NPN transistor in the model are determined. The influence of the key model parameters on the switching characteristics of the device is analyzed, such as the bias capacitance, the static resistance and the internal distributed inductance of the GCT. Thirdly, the accuracy and applicability of M-2T-3R circuit simulation model are analyzed. By comparing the simulation results of the circuit model of 4.5kV/4kAIGCT with the results of the device numerical analysis, the measured waveforms and the performance indexes in the application manual, the key characteristic parameters can basically meet the requirements of the indicators. It is shown that the model can accurately characterize the commutation process and switching characteristics of GCT, and the circuit simulation model is used in 4.5kV/3.6kA and 4.5kV/2.2kA series respectively, and the simulation curves of switching characteristics are in good agreement with the results obtained by numerical analysis of the devices. The model can be applied to IGCTs with different current levels. The simulation model of GCT circuit established in this paper can be used in the design of drive and protection circuit of IGCT and the simulation of application system.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN34

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