氧化锌薄膜的微观结构及其结晶性能研究

发布时间：2018-05-16 15:16

本文选题：氧化锌 + 薄膜　；参考：《中南民族大学学报(自然科学版)》2017年04期

【摘要】：以普通玻璃作为衬底材料,采用射频磁控溅射方法制备了氧化锌(ZnO)透明导电薄膜,通过X射线衍射(XRD)和X射线光电子能谱(XPS)测试,研究了衬底温度对薄膜微观结构及其结晶性能的影响.结果表明:所制备的ZnO薄膜均为(002)晶面择优取向生长的多晶薄膜,其微观结构和结晶性能与衬底温度密切相关.衬底温度对ZnO薄膜的织构系数TC(hkl)、平均晶粒尺寸、位错密度、晶格应变和晶格常数都具有不同程度的影响,当衬底温度为800 K时,ZnO薄膜样品的织构系数TC(002)最高(4.929)、平均晶粒尺寸最大(20.91 nm)、位错密度最小(2.289×10~(15)line·m~(-2))、晶格应变最低(2.781×10~(-3)),具有最高的(002)晶面择优取向生长性和最佳的微观结构性能.
[Abstract]:Zinc oxide (ZnO) transparent conductive thin films were prepared by RF magnetron sputtering with ordinary glass as substrates. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements were performed. The effect of substrate temperature on the microstructure and crystallization properties of the films was investigated. The results show that all the ZnO films are polycrystalline films with preferential orientation on the crystal plane. The microstructure and crystallization properties of the films are closely related to the substrate temperature. The substrate temperature has different effects on the average grain size, dislocation density, lattice strain and lattice constant of ZnO thin films. When the substrate temperature is 800K, the texture coefficient TCn002) is the highest (4.929g), the average grain size is maximum (20.91nm), the minimum dislocation density is 2.289 脳 10~(15)line ~ (2), and the lattice strain is 2.781 脳 10 ~ (10) ~ (-3), which has the highest orientation and the best microstructure and properties.
【作者单位】：中南民族大学电子信息工程学院;
【基金】：湖北省自然科学基金资助项目(2011CDB418)
【分类号】：TN304.21

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