零阈值MOS管解析及其关键电路设计

发布时间：2018-05-18 06:01

本文选题：超低电压 + 大宽长比　；参考：《苏州大学》2015年硕士论文

【摘要】：超低电压微纳电子学是当代学术界和工业界迎合绿色设计的关注热点。设计等效为毫伏数量级的阈值电压MOSFET,主流方法是大宽长比和体源偏置,改良的方法是前两法的融合。在江苏省自然科学基金支撑下(BK20141196),本文工作目标有二:一是综论实现超低电压模拟电路的硅极限供电压与基本设计理念;二是从单管出发,建构推导大宽长比条件下的n A级漏电流,并改良设计极少管子构造的关键模拟电路。旨在重点分析李文石教授发明的3MOSFET施密特非门,主要工作内容:一是,构建大宽长比的单管I-V特性解析式,应用解析非门滤波器和前述李氏电路[1](3MOSFET);二是,基于已知的体偏置法构建完成了CMOS非门的I-V特性对比。关键电路的关键结果是:CMOS非门滤波器的供电压可降至500m V;3MOSFET工作在100m V;3MOSFET的双阈值模型包含6个参数,误差小于10%。为推动脑健康微电子学的健康发展,本工作做出了新的研发积累。
[Abstract]:Ultra-low voltage micro-nano electronics is the focus of attention in modern academia and industry to cater to green design. A threshold voltage MOSFET equivalent to millivolts is designed. The mainstream methods are large aspect ratio and bulk source bias. The improved method is the fusion of the first two methods. Supported by the Natural Science Foundation of Jiangsu Province, this paper has two working objectives: one is to discuss the basic design concept of silicon limiting power supply voltage of ultra-low voltage analog circuit, the other is to proceed from single transistor. The n A leakage current is derived under the condition of large aspect ratio, and the key analog circuit which is rarely constructed is improved. This paper focuses on the analysis of 3MOSFET Schmitt gate invented by Professor Li Wen Shi. The main work is as follows: first, to construct a large aspect ratio single transistor I-V characteristic analytical formula, to apply the analytic non-gate filter and the aforementioned Li's circuit [1] / 3 MOSFETs; the other is to construct the analytical non-gate filter and the aforementioned Li's circuit. The I-V characteristics of CMOS non-gate are compared based on the known volume bias method. The key result of the key circuit is that the power supply voltage of the 10: CMOS non-gate filter can be reduced to 500m V3 MOSFET operating in 100m V3 MOSFET with six parameters and an error less than 10. In order to promote the healthy development of brain health microelectronics, this work has made a new research and development accumulation.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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