碳化硅二极管性能分析模拟研究

发布时间：2018-05-19 06:12

本文选题：SiC + pn结型二极管　；参考：《河北工业大学》2015年硕士论文

【摘要】：随着微电子技术的发展,传统的半导体材料(Si)已经无法满足高性能半导体器件的技术要求。由此推动宽禁带半导体材料和电子电力器件的发展,然而目前对碳化硅(SiC)pn结二极管的研究普遍在其高温、耐压的特性上,缺乏多种SiC同素异构体二极管之间的、和常规材料Si二极管对比的,以及可供实际应用的参考数据的研究和分析。本文以4H-SiC半导体材料为例建立p+n-n+结构二极管的仿真模型,选取了3C-SiC、6H-SiC、4H-SiC三种同素异构体的pn结二极管,以及Si pn结二极管进行模拟研究,通过对比分析和参数提取,研究碳化硅器件的优越性能。研究表明,SiC的宽禁带特性使其pn结型二极管正向特性在常温下的电流范围为10-14A~10-2A,而达到高温700K时,电流范围为10-6A~10-3A,理想因子n范围始终在1~2之间。而Si二极管工作在温度达到550K时,扩散区电流范围仅为10-3A~10-1A,二极管特性已消失。4H-SiC pn结二极管的反向击穿电压受衬底厚度影响,600K下反向击穿电压可以达到700V,反向漏电流达到1.2×10-11A/cm2。由此可知,SiC半导体材料器件具有优越的性能,研究所得参数对选取碳化硅二极管适用扩散区范围有重要意义。
[Abstract]:With the development of microelectronic technology, the traditional semiconductor material (Si-Si) has been unable to meet the technical requirements of high performance semiconductor devices. This has promoted the development of wide band gap semiconductor materials and electronic power devices. However, at present, the study of silicon carbide SICP Pn-junction diodes is generally characterized by their high temperature and voltage characteristics, and the lack of many kinds of SiC isomer diodes. Research and analysis of reference data compared with conventional Si diodes and available for practical application. In this paper, the simulation model of p-n-n structure diodes is established by taking 4H-SiC semiconductor material as an example. The pn junction diodes of 3C-SICP 6H-SiC 4H-SiC isomers and the Sipn junction diodes are selected for simulation study. The simulation results are compared and the parameters are extracted. The superior performance of silicon carbide devices is studied. The results show that the wide bandgap characteristic of sic makes the forward characteristics of p-n junction diodes in the current range of 10-14 An 10-2A at room temperature, while at 700K at high temperature, the current range is 10-6An 10-3A, and the ideal factor n is always between 1g ~ 2. When the temperature of Si diode is up to 550 K, the current range of diffusion region is only 10-3 An ~ (-1) A. the reverse breakdown voltage of 4H-SiC PN junction diode has disappeared. The reverse breakdown voltage can reach 700 V and the reverse leakage current can reach 1.2 脳 10 ~ (-11) A / cm ~ (2) under the influence of substrate thickness. It can be concluded that sic semiconductor devices have superior properties and the study of the parameters is of great significance in selecting the suitable diffusion region of silicon carbide diodes.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN31

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