光刻胶用底部抗反射涂层研究进展

发布时间：2018-05-20 19:05

本文选题：光刻胶 + 光刻技术　；参考：《影像科学与光化学》2016年02期

【摘要】：随着微电子工业的蓬勃发展,光刻技术向着更高分辨率的方向迈进,运用底部抗反射涂层有效消除光刻技术中的驻波效应、凹缺效应,提高关键尺寸均一性和图案分辨率,引起了广大研究者的关注。本文简要介绍了光刻胶和光刻技术,底部抗反射涂层的分类、基本原理、刻蚀工艺以及其发展状况。重点对底部抗反射涂层的最新研究进展进行了总结,尤其是碱溶型底部抗反射涂层在光刻胶中的应用研究,最后对底部抗反射涂层的发展前景和方向进行了展望。
[Abstract]:With the rapid development of microelectronics industry, lithography technology is moving towards a higher resolution. The use of bottom anti-reflection coating can effectively eliminate the standing wave effect and notch effect in lithography, and improve the uniformity of key dimensions and pattern resolution. It has attracted the attention of many researchers. This paper briefly introduces photoresist and lithography technology, classification, basic principle, etching technology and development of anti-reflection coatings on the bottom. In this paper, the latest research progress of anti-reflection coatings on the base is summarized, especially the application of basic-soluble anti-reflection coatings in photoresist. Finally, the prospect and direction of the anti-reflection coatings on the bottom are prospected.
【作者单位】：江南大学化学与材料工程学院;苏州瑞红电子化学品有限公司;
【基金】：国家重大科技专项(2010ZX02304) 江苏省产学研前瞻性联合研究项目(BY2015019-14) 中央高校基本科研业务费专项资金(JUSRP11514)资助
【分类号】：TN305.7;TQ630.1

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