GaSb薄膜掺杂及异质结的光学性质研究

发布时间：2018-05-21 00:17

  本文选题：GaSb + 掺杂　； 参考：《长春理工大学》2017年硕士论文

【摘要】：GaSb材料因其独特的性质具有广阔的应用前景。但是本征GaSb通常为P型导电,存在大量受主缺陷,限制了GaSb的应用。此外GaSb表面易形成氧化物,使其表面性质严重退化,导致高的表面复合速率和大的漏电流,阻碍提高GaSb基器件的性能。本文以提高GaSb材料的光学性质为研究目标,通过对GaSb材料进行N型和P型掺杂与MgO干法钝化处理,调节GaSb薄膜的发光性质,为GaSb材料的器件化应用奠定了基础。本文的研究内容主要包含以下两部分:利用分子束外延技术在GaAs衬底上异质外延N型Te掺杂、P型Be掺杂及非掺杂GaSb样品;利用X射线衍射研究了生长GaSb薄膜的晶体质量,结果表明非掺杂GaSb和掺杂GaSb的晶体质量很好;利用光致发光研究了掺杂对发光的影响,N型Te掺杂引入与Te相关的施主-受主跃迁的发光峰,10K时位于0.729eV。P型Be掺杂会减少受主缺陷的浓度,光致发光谱中只观察到束缚激子的发光峰。利用原子层沉积技术在GaSb衬底上生长了不同厚度的MgO薄膜;使用X射线光电子能谱测试了MgO/GaSb异质结的能带带阶,计算结果表明MgO/GaSb为I型能带结构,说明了沉积MgO后,电子和空穴被局域在GaSb层,导致电子和空穴的复合率增大,提高了GsSb材料的发光性能;并且使用PL研究了MgO对GaSb的发光性质的改善,室温时GaSb衬底与MgO/GaSb位于同一峰位,即带边发光,且MgO/GaSb异质结的发光强度是GaSb衬底的1.5倍,表明沉积MgO薄膜对GaSb具有增强其发光的作用。与非掺杂GaSb相比,生长MgO薄膜后发光质量得到改善,各个峰的半高宽明显变窄,低温时形成了分离的峰。
[Abstract]:GaSb materials have a broad application prospect because of their unique properties. However, the intrinsic GaSb is usually P-type conductive, there are a large number of acceptor defects, which limits the application of GaSb. In addition, oxides are easily formed on the surface of GaSb, resulting in serious degradation of surface properties, resulting in high surface recombination rate and large leakage current, which hinders the improvement of the performance of GaSb based devices. In order to improve the optical properties of GaSb materials, this paper regulates the luminescence properties of GaSb thin films by N and P doping and MgO dry passivation of GaSb materials, which lays a foundation for the device application of GaSb materials. The main contents of this paper are as follows: heteroepitaxy of N-type Te doped and non-doped GaSb samples on GaAs substrates by molecular beam epitaxy (MBE), crystal quality of GaSb thin films grown by X-ray diffraction (XRD), The results show that the crystal quality of undoped GaSb and doped GaSb is very good. The effect of dopant on luminescence was investigated by using photoluminescence. The concentration of acceptor defect was reduced by doping in 0.729eV.P type be when the luminescence peak of donor-acceptor transition associated with Te was introduced into N-type Te doping. In the photoluminescence, only the photoluminescence peaks of bound excitons are observed. MgO thin films with different thickness were grown on GaSb substrate by atomic layer deposition technique, and the band order of MgO/GaSb heterojunction was measured by X-ray photoelectron spectroscopy. The calculated results show that MgO/GaSb is I-type energy band structure, which shows that after MgO deposition, the band order of MgO/GaSb heterojunction is determined by X-ray photoelectron spectroscopy (XPS). Electron and hole are localized in the GaSb layer, which leads to the increase of the recombination rate of electron and hole, which improves the luminescent properties of GsSb, and the improvement of the luminescent properties of GaSb by MgO is studied by PL. The GaSb substrate is located at the same peak as MgO/GaSb at room temperature. The luminescence intensity of MgO/GaSb heterojunction is 1.5 times higher than that of GaSb substrate, indicating that the deposition of MgO thin films can enhance the luminescence of GaSb. Compared with undoped GaSb, the luminescent quality of MgO thin films is improved, the half-maximum width of each peak is narrowed obviously, and a separate peak is formed at low temperature.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.055

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