铪基高K栅的制备、物性及MOS器件性能研究

发布时间：2018-05-21 08:31

本文选题：铪基高介电栅介质 + 磁控溅射　；参考：《安徽大学》2016年硕士论文

【摘要】：随着微电子工业遵循摩尔定律的不断发展,集成电路集成度不断提高,器件尺寸不断缩小,在这种趋势下,先前使用的传统高K栅介质SiO2层会减小到原子尺寸,漏流会急剧增加,从而导致器件失效。选泽高K新栅介质材料代替SiO2成为目前急需解决的问题。通过不断实验和探索发现,铪基高介电栅极材料具有较高的介电常数和结晶温度,稳定的内部结构以及较小的漏电流和及频散依赖,并且与硅衬底有优越的界面特性。HfTiO, HfLaOx, HfAlOx; HfSiOx, HfON, HfTiON, HfGdO等高K栅介质由于其独特的物性而受到微电子界的青睐,其中,TiO2掺杂的HfO2栅介质薄膜成为研究的热点和重点。因为TiO2具有很高的介电常数(～80),所以TiO2的掺入能够显著地减小薄膜的等效氧化层厚度(EOT),有效的抑制漏电流。基于该背景,我们围绕铪基高介电栅介质材料的光学、电学及界面特性开展了系统的研究。主要的研究内容和创新主要如下：一、研究了不同浓度的TiO2掺杂对铪基高介电栅介质材料的的光学,电学以及微观结构的影响,并获取了最佳TiO2掺杂浓度。二、研究了退火温度对HfTiO薄膜电学特性的影响,探究了高K栅介质中漏电流的主要导通机理。结果表明样品在400℃退火可以得到较少的电荷缺陷并且能够显著地降低栅极漏流的产生。三、研究了Ti、N共掺对铪基栅介质薄膜的结晶温度、界面特性的调控。结果表明掺N有效提升了薄膜结晶温度,抑制了缺陷产生和界面层的生长。四、研究了HfTiO-HfGdO 和 HfGdO-HfTiO不同叠层栅的界面和电学特性,结果表明Al/HfGdO-HfTiO/Si具有更优异的电学性能,更能抑制硅酸盐的生成。
[Abstract]:With the continuous development of Moore's law in microelectronics industry, the integration degree of integrated circuits is increasing and the size of the device is shrinking. In this trend, the SiO2 layer of the traditional high K gate medium will be reduced to the size of the atom, and the leakage will increase rapidly, which leads to the loss of the device. Through continuous experiments and exploration, it is found that the HF based high dielectric gate material has high dielectric constant and crystallization temperature, stable internal structure, smaller leakage current and frequency dispersion dependence, and the high interface properties of.HfTiO, HfLaOx, HfAlOx, HfSiOx, HfON, HfTiON, HfGdO and other high K gate medium with the silicon substrate are superior to the silicon substrate. TiO2 doped HfO2 gate dielectric thin film has become the focus and focus of the microelectronic field for its unique physical properties. Because TiO2 has a high dielectric constant (~ 80), the incorporation of TiO2 can significantly reduce the equivalent oxide layer thickness (EOT) of the film and effectively inhibit the leakage current. Based on this background, we revolve around hafnium The main research content and innovation are as follows: first, the effects of TiO2 doping on the optical, electrical and microstructure of HF based high dielectric dielectric materials are studied, and the best TiO2 doping concentration is obtained. Two. The effect of fire temperature on the electrical properties of HfTiO thin film is studied. The main conduction mechanism of leakage current in high K gate medium is explored. The results show that the sample can get less charge defects at 400 C and can significantly reduce the generation of gate leakage. Three, the crystallization temperature and interfacial properties of Ti and N Co doped with hafnium based gate dielectric thin film are studied. The results show that the doping of N effectively improves the crystallization temperature of the film, inhibits the formation of defects and the growth of the interface layer. Four, the interface and electrical properties of different cascades of HfTiO-HfGdO and HfGdO-HfTiO have been studied. The results show that Al/HfGdO-HfTiO/Si has more excellent electrical properties and more inhibits the formation of silicate.
【学位授予单位】：安徽大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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