GaN基Ka波段HEMT器件及MMIC功率放大器研究

发布时间：2018-05-21 12:17

本文选题：Ka波 + 氮化镓高电子迁移率晶体管　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：GaN HEMT器件以其高频大功率特点成为微波功率器件的绝佳选择,目前关于GaN HEMT的研究已经逐渐进入毫米波频段。本论文主要针对Ka波GaN HEMT及功率放大器进行研究,取得的主要成果如下:1、基于Atlas器件仿真软件,构造了AlGaN/GaN HEMT器件的二维平面结构,成功建立了Ka波AlGa N/GaN HEMT器件的二维电学仿真模型,探索了侧墙AlN的使用对栅下电场的影响,其仿真结果对后续器件结构的设计具有指导意义。2、开展了Ka波GaN HEMT关键工艺研究,利用SF6气体探索低损伤凹槽栅刻蚀;采用多层复合电子束胶体系,优化电子束曝光条件,成功制得100nm T型栅;研究了Al2O3表面钝化。3、针对Ka波器件所存在的漏电问题,结合凹栅槽技术,采用ALD生长Al2O3方法成功研制出栅长为0.16μm的Al2O3钝化Al GaN/GaN HEMT器件,器件肖特基栅漏电减小近两个数量级,fmax/ft比值增大,关态击穿电压也显著提升。4、开展外延结构创新设计,引入AlN背势垒来改善沟道载流子的限阈特性。在基于蓝宝石衬底的外延材料上成功制得了0.16μm栅长的AlN背势垒结构AlGaN/GaN HEMT器件,测试结果表明:AlN背势垒结构有效抑制了器件的短沟道效应并减小器件栅漏电,器件fmax达到186 GHz,较常规器件提升了19.3%,30GHz下连续波输出功率达到了0.88 W/mm,PAE为12.31%。5、基于Win公司研制的芯片,采用load-pull设计方法制作了一款两级多管的功率放大电路。
[Abstract]:GaN HEMT devices have become the best choice for microwave power devices because of their high frequency and high power. At present, the research on GaN HEMT has gradually entered the millimeter wave band. In this paper, the Ka-wave GaN HEMT and power amplifier are studied. The main results are as follows: 1. Based on the simulation software of Atlas device, the two-dimensional planar structure of AlGaN/GaN HEMT device is constructed. The 2-D electrical simulation model of Ka wave AlGa N/GaN HEMT devices is successfully established, and the influence of the use of side wall AlN on the electric field under gate is explored. The simulation results are of guiding significance for the design of subsequent device structures. The key process of Ka wave GaN HEMT is studied. Using SF6 gas to explore low damage grooved gate etching; using multilayer composite electron beam adhesive system to optimize the electron beam exposure conditions, the 100nm T gate is successfully fabricated; the passivation of Al2O3 surface. 3, and the leakage problem of Ka wave devices are studied. Combined with concave gate slot technique, Al2O3 passivated Al GaN/GaN HEMT devices with gate length of 0.16 渭 m were successfully fabricated by using ALD growth Al2O3 method. Schottky gate leakage was reduced by nearly two orders of magnitude and the ratio of f max / ft was increased. The on-off breakdown voltage is also significantly increased .4. innovative epitaxial structure design is carried out and the AlN back barrier is introduced to improve the threshold limiting characteristics of the channel carriers. AlGaN/GaN HEMT devices with 0.16 渭 m gate length AlN back barrier structure have been successfully fabricated on sapphire substrate. The experimental results show that the AlN back barrier structure can effectively suppress the short channel effect of the device and reduce the gate leakage. The fmax of the device is up to 186GHz, and the output power of continuous wave is up to 0.88W / mmPae at 30 GHz compared with the conventional device. Based on the chip developed by Win Company, a two-stage multi-transistor power amplifier circuit is fabricated by using load-pull design method.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386;TN722.75

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