碱性铜精抛液中表面活性剂ADS对平坦化效果的影响

发布时间：2018-05-21 14:22

本文选题：铜精抛液 + 化学机械抛光(CMP)　；参考：《半导体技术》2017年11期

【摘要】：研究了阴离子表面活性剂十二烷基硫酸铵(ADS)在弱碱性铜抛光液中对晶圆平坦化效果的影响。对不同质量分数的阴离子表面活性剂ADS下的抛光液表面张力、铜去除速率、抛光后铜膜的碟形坑高度、晶圆片内非均匀性和表面粗糙度进行了测试。实验结果表明,当阴离子表面活性剂ADS的质量分数为0.2%时,抛光液的表面张力降低,铜的去除速率为202.5 nm·min~(-1),去除速率片内非均匀性减小到4.15%,抛光后铜膜的碟形坑高度从132 nm降低到68.9 nm,表面粗糙度减小到1.06 nm。与未添加表面活性剂相比,晶圆表面的平坦化效果得到改善。
[Abstract]:The effect of anionic surfactant dodecyl ammonium sulfate (ADS) on wafer flatting in weakly alkaline copper polishing solution was studied. The surface tension, copper removal rate, disc pit height, inhomogeneity and surface roughness of polished copper film under different mass fraction of anionic surfactant ADS were measured. The experimental results show that the surface tension of the polishing liquid decreases when the mass fraction of the anionic surfactant ADS is 0.2. The removal rate of copper was 202.5 nm / min ~ (-1), and the inhomogeneity of the removal rate was reduced to 4.15 nm. After polishing, the disc pit height of the copper film was reduced from 132nm to 68.9 nm, and the surface roughness was reduced to 1.06 nm. The flattening effect of wafer surface is improved compared with that without surfactant.
【作者单位】：河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室;
【基金】：国家科技重大专项子课题资助项目(2016ZX02301003-004-007) 河北省自然科学基金青年基金资助项目(F2015202267) 河北工业大学优秀青年科技创新基金资助项目(2015007)
【分类号】：TN405

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