典型SiGe HBTs的总剂量辐射效应研究

发布时间：2018-05-23 07:51

本文选题：锗硅异质结双极晶体管 + 总剂量辐射效应　；参考：《新疆大学》2015年硕士论文

【摘要】：为了对比研究不同厂家不同SiGe HBTs器件的总剂量辐射损伤效应以及在不同偏置不同剂量率条件下SiGe HBTs器件的辐射响应规律和潜在的损伤机理,本文选取了四款不同的SiGe HBTs器件,设计了相关实验,利用60Coγ射线对其在不同偏置状态下进行了高低剂量率分别为80rad(Si)/s和0.05rad(Si)/s,总累积剂量分别为1.1Mrad(Si)和1.0Mrad(Si)的电离总剂量辐照实验。实验结果表明,SiGe HBTs具有一定的抗总剂量辐照的性能,且基极电流和电流增益比集电极电流对辐射更敏感。在不同偏置条件辐射下,除了器件NESG260234外基本都表现为基射结反偏损伤最大,零偏次之,正偏最小,可以将基射结反偏作为SiGe HBTs器件的最劣辐照偏置,其潜在的损伤机理可由边缘电场模型来解释。不同剂量率辐照下KT1151器件只表现为时间相关效应,器件KT9041表现出了非常明显的低剂量率辐射损伤增强效应,NESG260234与BFP640ESD在现有的实验数据下剂量率效应不明显,不同的剂量率效应可以由空间电荷模型下高剂量率辐照损伤被抑制来进行解释说明。
[Abstract]:In order to compare and study the total dose radiation damage effect of different SiGe HBTs devices from different manufacturers, the radiation response law and potential damage mechanism of SiGe HBTs devices under different bias and different dose rates, four different SiGe HBTs devices are selected in this paper. The experiment was designed and the total dose irradiation experiments were carried out by using 60Co 纬-ray at 80rad(Si)/s and 0.05 RDS at different bias states, respectively, and the total cumulative dose was 1.1 Mradsii) and 1.0 Mradsir ~ (-Si), respectively. The experimental results show that SiGe HBTs has a certain resistance to total dose irradiation, and the base current and current gain are more sensitive to radiation than collector current. Under different bias conditions, except for the device NESG260234, the fundamental emitter damage is the largest, the zero bias is the second, and the positive bias is the smallest. The fundamental junction inverse bias can be regarded as the worst radiation bias of the SiGe HBTs devices. The potential damage mechanism can be explained by the edge electric field model. Under different dose rates, KT1151 devices exhibit only time-dependent effects, and KT9041 shows a very obvious enhancement effect of radiation damage at low dose rate. The dose-rate effects of NESG260234 and BFP640ESD are not obvious under the available experimental data. Different dose rate effects can be explained by the suppression of high dose rate radiation damage under space charge model.
【学位授予单位】：新疆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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