有机半导体在非对称金-石墨烯电极上的取向生长

发布时间：2018-05-23 11:16

本文选题：有机薄膜晶体管 + 表面能　；参考：《固体电子学研究与进展》2017年04期

【摘要】：为了实现在微尺度范围内有机半导体的取向生长,提出了一种基于不对称金-石墨烯电极的底接触有机薄膜晶体管器件结构。半导体前驱体溶液在不同衬底上表现出的不同接触角将打破液体/空气界面处的表面张力与表面能的总体平衡,形成马兰戈尼流并促使溶液在低润湿性的石墨烯电极表面的接触线快速后退。实验结果表明,基于这种不对称电极制备的底接触有机薄膜晶体管(OTFT)阵列的平均迁移率显著提升,达到常规对称结构器件的2倍,同时器件迁移率的相对标准差从53%下降到33%。该不对称器件结构实现了半导体薄膜在器件沟道处的取向生长,从而提高了器件迁移率与均匀性。
[Abstract]:In order to realize the oriented growth of organic semiconductors in microscale, a novel structure of bottom contact organic thin film transistors based on asymmetric gold-graphene electrodes is proposed. The different contact angles of the semiconductor precursor solution on different substrates will break the overall equilibrium between the surface tension and surface energy at the liquid / air interface. The formation of the Ma Lan Goni current and the rapid retreat of the contact line of the solution on the surface of the low wettability graphene electrode. The experimental results show that the average mobility of the bottom contact organic thin film transistor (OTFT) array based on this asymmetric electrode is significantly increased, which is 2 times of that of the conventional symmetrical device, and the relative standard deviation of the device mobility decreases from 53% to 33%. The asymmetric device structure realizes the orientation growth of semiconductor film at the channel of the device, which improves the mobility and uniformity of the device.
【作者单位】：合肥工业大学光电技术院特种显示技术国家工程实验室省部共建现代显示技术国家重点实验室(培育基地)特种显示技术教育部重点实验室;
【基金】：国家自然科学基金资助项目(51203039,21174036,51573036) 科技部973计划前研专项(2012CB723406)
【分类号】：TN321.5

【相似文献】