基于氮化镓功放管高效率多载波功率放大器的设计与实现

发布时间：2018-05-25 11:04

本文选题：TD-LTE + GaN功率放大管　；参考：《中国科学院大学(中国科学院工程管理与信息技术学院)》2017年硕士论文

【摘要】：近年来,随着通信行业的迅猛发展,多载波、宽频带、高数据已经成为移动通信发展的重要标志。目前,4.5G将在现有网络B41频段部署,B42频段则被看好是开发第五代移动通信低频段的重要频谱资源,而开发B41、B42频段的无线产品必然需要相应频段的射频放大单元。本文将设计和实现一种用于B41、B42频段微功率基站的双频功率放大器,而其中的功放电路也可直接应用于B41频段与B42频段5瓦输出功率的基站设备中,其优异的宽带性能可支持100MHz宽带信号7瓦输出功率能力。本文中,作者完成的主要工作如下:(1)完成B41、B42双频微功率基站功放板设计与开发。通过需求分析,本文以CREE公司的GaN(氮化镓)功放管CGHV27015S和CGHV27030S为核心器件来设计实现。基于Doherty基本理论设计1:2非对称Doherty电路;实现饱和输出功率大于46dBm,额定输出功率下效率大于40%,拥有5载波20LTE宽带信号放大能力,通过数字预失真校正,ACLR满足-48dBc指标,电路总增益大于40dB,带内平坦度小于2.5dB,开关时间小于3μs。(2)完成CGHV27015S和CGHV27030S组成的非对称Doherty电路设计与仿真。首先通过ADS分别对两个器件进行单独的电路仿真,然后基于宽带合路器基本理论设计仿真合路器部分电路,最后做两个器件电路与合路器的联合仿真,完成本课题核心电路仿真工作。(3)完成了单板功能与性能测试,符合总体设计要求,并应用于整机产品中。本设计基于氮化镓功放管实现了B41、B42频段的高效率多载波射频功率放大器。此放大器满足工作在相应频段的LTE多载波聚合、256QAM、输出功率为7W的设备要求,同时也可应用到将来此频段4.5G与将来的5G有源天线阵列中,从而满足未来移动通信市场对通信设备更高速率和可靠性的需求。
[Abstract]:In recent years, with the rapid development of the communication industry, multi-carrier, broadband, high-data has become an important symbol of the development of mobile communications. At present, it is expected that 4.5G will be deployed in the B41 band of the existing network. It is an important spectrum resource to develop the low frequency band of the fifth generation mobile communication. However, the development of the B41 / B42 wireless product will inevitably require the RF amplification unit in the corresponding frequency band. In this paper, a dual-frequency power amplifier is designed and implemented for the B41 / B42 micropower base station, and the power amplifier circuit can also be directly used in the B41 band and the B42 band 5-watt output base station equipment. Its excellent wideband performance can support 100MHz wideband signal 7 W output power capacity. In this paper, the main work accomplished by the author is as follows: 1) the design and development of the power amplifier board of the B41 / B42 dual-frequency micro-power base station. Based on the requirement analysis, the CGHV27015S and CGHV27030S of gan (gan) power amplifier made by CREE are designed and implemented in this paper. Based on the basic theory of Doherty, the 1:2 asymmetric Doherty circuit is designed, the saturation output power is greater than 46dBm, the efficiency under rated output power is more than 40, and the amplification ability of 5-carrier 20LTE wideband signal is obtained. The ACLR can satisfy the -48dBc index through digital predistortion correction. The total gain of the circuit is more than 40 dB, the in-band flatness is less than 2.5 dB, and the switching time is less than 3 渭 s. 2) the asymmetric Doherty circuit composed of CGHV27015S and CGHV27030S is designed and simulated. At first, two devices are simulated separately by ADS, then some circuits of combiner are designed based on the basic theory of wideband combiner. Finally, the combined simulation of two device circuits and combiner is done. The function and performance of the single board are tested, which meets the overall design requirements and is applied to the whole machine product. A high efficiency multi-carrier RF power amplifier is designed based on gallium nitride power amplifier (Gallium nitride) in B41 / B42 band. The amplifier can meet the requirements of 256QAM and 7W of LTE multicarrier polymeric antenna operating in the corresponding frequency band. It can also be used in the future 4.5G and 5G active antenna arrays in the future. In order to meet the needs of the future mobile communication market for higher speed and reliability of communication equipment.
【学位授予单位】：中国科学院大学(中国科学院工程管理与信息技术学院)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75

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