一种用于全MOS电压基准源的新颖预抑制电路

发布时间：2018-05-27 16:20

  本文选题：预抑制 + 电压基准源　； 参考：《微电子学》2016年06期

【摘要】：提出了一种用于全MOS电压基准源的新颖预抑制电路。采用一个大宽长比PMOS管和负反馈环路,将预抑制电压与基准电压之差固定为一个阈值电压。获得的预抑制电压用来为全MOS电压基准源供电,极大地改善了基准电压的电源调整率、温度稳定性和电源电压抑制比。采用Nuvoton 0.35μm 5V标准CMOS工艺进行仿真,整个电路的版图尺寸为64μm×136μm。结果表明:电压基准源的输出基准电压为1.53V;电源电压在3.4~5.5V范围内,线性调整率为97.8μV/V;PSRR在10 Hz处为-143.2dB,在100 Hz处为-123.3dB,在1kHz处为103.3dB;环境温度在-45℃~125℃范围内,平均温度系数为8.7×10~(-6)/℃。
[Abstract]:A novel pre-suppression circuit for full MOS voltage reference is proposed. A large aspect ratio PMOS transistor and a negative feedback loop are used to fix the difference between the pre-suppression voltage and the reference voltage as a threshold voltage. The obtained pre-suppression voltage is used to supply the full MOS voltage reference source, which greatly improves the power supply adjustment rate, temperature stability and power supply voltage rejection ratio of the reference voltage. Nuvoton 0.35 渭 m 5V standard CMOS process is used to simulate the circuit. The layout size of the whole circuit is 64 渭 m 脳 136 渭 m. The results show that the output reference voltage of the voltage reference source is 1.53 V, and the linear adjustment rate is 97.8 渭 V / V / V PSRR of -143.2dB at 10 Hz, -123.3 dB at 100Hz and 103.3 dB at 1kHz, and the average temperature coefficient is 8.7 脳 10 ~ (-6) dB / 鈩，

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