基于等效相移技术的半导体激光器优化设计及其应用

发布时间：2018-05-28 21:50

本文选题：分布反馈激光器 + 等效相移　；参考：《南京大学》2015年硕士论文

【摘要】：随着互联网数据、移动通信的快速增长,人们对数据流量及网络接入速度的要求越来越高,由传统分立器件构成的光通信网络逐渐出现压力；同时由于通信设备的大量部署,数据中心的急速扩张,光网络的能耗问题也日益凸显。为了解决通信带宽瓶颈及通信能耗巨大的问题,人们普遍认为光电子器件的集成将是这些问题的有效解决方案。最近几年来,光子集成技术(PIC)一直是光通信领域的研究热点,包括现在炙手可热的硅基光子集成平台,以及相对成熟并且已经实现产业化的InP集成光学平台,都为光子集成的发展带来了曙光。然而,无论是硅基光子集成平台还是InP集成平台,都离不开半导体激光器阵列这一关键器件。其中分布反馈(DFB)半导体激光器作为光通信系统中的信源,一直是科学家们重点研究的关键器件,伴随着光通信系统的发展,单个DFB半导体激光器的性能提升也越来越大。然而,要制作DFB激光器阵列却并非易事,DFB半导体激光器通过Bragg光栅来实现稳定的单模激射,其光栅周期在200 nm左右,要实现波长间隔准确的DFB激光器阵列,要求光栅周期变化精确至0.1 nm,这即便是电子束曝光(EBL)技术也很难达到。并且EBL有加工过程缓慢复杂,成品率低下,成本高昂等缺点,不适合大规模工业化生产。为了解决上述困难,重构-等效啁啾技术(REC)被提出来并用于制作低成本的DFB半导体激光器阵列,本论文的研究重点即是基于REC技术实现低成本并且性能优良的DFB激光器阵列,以及制作一些新型有用的集成器件。第一章是本论文的绪论,该章介绍了DFB半导体激光器的研究背景,光子集成目前的发展状况,以及REC技术的原理,简要介绍了目前基于REC技术的研究成果。第二章首先介绍了DFB半导体激光器的标准结构,在此基础上推导了影响激光器性能的一个关键参数——折射率耦合系数的计算方法。然后研究了激光器镀膜对其性能的影响,包括两种常用的镀膜方式——高反膜(HR膜)及抗反膜(AR膜),并且提出了通过非对称相移的方法来提高激光器的性能,并用ALDS软件进行了仿真分析。第三章主要介绍的是高性能DFB激光器阵列的实现。该激光器阵列基于掩埋异质结(BH)结构,基于该结构的激光器具有低阈值、高斜效率、低噪声以及窄线宽等优点。结合REC技术,我们成功制作了BH结构的DFB半导体激光器阵列,同时实现了在1550 nm及1310 nm通信窗口的激光器阵列。测试结果表明,该激光器阵列拥有良好的性能,具有产业化的潜力。第四章提出并成功制备了一种新型的可调谐激光器。该可调谐激光器基于8波长REC激光器阵列,具有良好的单模稳定性,通过温度调谐可以实现25 nm的波长调谐范围,性能良好。我们对该激光器芯片做了测试,并且成功封装成了模块。第五章是对本论文工作的总结与展望。
[Abstract]:With the rapid growth of Internet data and mobile communication, the demand of data flow and network access speed is becoming higher and higher, and the pressure of optical communication network composed of traditional discrete devices has gradually appeared. At the same time, due to the deployment of a large number of communication equipment, With the rapid expansion of data centers, the problem of energy consumption in optical networks has become increasingly prominent. In order to solve the problem of bandwidth bottleneck and huge communication energy consumption, it is generally considered that the integration of optoelectronic devices will be an effective solution to these problems. In recent years, photonic integration technology (InP) has been a hot research topic in the field of optical communication, including the hot silicon-based photonic integration platform and the relatively mature and industrialized InP integrated optical platform. All bring the dawn to the development of photon integration. However, both silicon-based photonic integration platform and InP integrated platform can not be separated from semiconductor laser array as a key device. As a signal source in optical communication system, distributed feedback semiconductor laser (DFT) laser is always the key device that scientists focus on. With the development of optical communication system, the performance of single DFB semiconductor laser is improving more and more. However, it is not easy to fabricate DFB laser array to realize stable single mode laser emission by Bragg grating. The grating period is about 200nm, and the DFB laser array with accurate wavelength interval must be realized. The grating period variation is required to be accurate to 0.1 nm, which is difficult to achieve even with electron beam exposure (EBL) technique. Moreover, EBL has some disadvantages, such as slow and complex process, low yield and high cost, so it is not suitable for mass industrial production. In order to solve the above problems, reconfigurable equivalent chirp technique has been proposed and used to fabricate low cost DFB semiconductor laser arrays. The focus of this thesis is to realize low-cost and excellent DFB laser arrays based on REC technology. And make some new useful integrated devices. The first chapter is the introduction of this thesis. This chapter introduces the research background of DFB semiconductor laser, the current development of photonic integration, and the principle of REC technology, and briefly introduces the current research results based on REC technology. In the second chapter, the standard structure of DFB semiconductor laser is introduced, and the method of calculating the coupling coefficient of refractive index, a key parameter affecting the performance of the laser, is deduced. Then, the influence of laser coating on its performance is studied, including two common ways of coating, high reflective film (HR) and anti-reflective film (AR), and the method of asymmetric phase shift is proposed to improve the performance of the laser. The simulation analysis is carried out with ALDS software. The third chapter mainly introduces the realization of high performance DFB laser array. The laser array is based on buried heterojunction (BH) structure. The laser based on this structure has the advantages of low threshold, high slant efficiency, low noise and narrow linewidth. In combination with REC technology, we have successfully fabricated BH structure DFB semiconductor laser arrays, and we have realized the laser arrays with 1550 nm and 1310 nm communication windows at the same time. The experimental results show that the laser array has good performance and potential for industrialization. In chapter 4, a novel tunable laser is proposed and successfully fabricated. The tunable laser is based on 8-wavelength REC laser array and has good single-mode stability. The wavelength tuning range of 25 nm can be achieved by temperature tuning, and the performance is good. We tested the laser chip and successfully encapsulated it into a module. The fifth chapter is the summary and prospect of this paper.
【学位授予单位】：南京大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248.4

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