HDPCVD工艺的应用与改善

发布时间：2018-05-29 23:12

本文选题：化学气相淀积 + 高密度等离子体化学气相淀积　；参考：《天津大学》2015年硕士论文

【摘要】：随着集成电路制造业的发展,小型化、微型化导致对工艺技术水平的要求越来越高。其中,薄膜淀积技术(CVD)起到了很重要的推动作用。而高密度等离子体气相淀积工艺是一种优良的薄膜淀积技术,以其优越的性能在集成电路制造中发挥了重要的作用。本文以化学气相沉积工艺为基础,以高密度等离子体气相淀积工艺为研究对象,讨论了集成电路制造中薄膜淀积技术这一重要的生产步骤,对薄膜淀积技术与工艺做了介绍,比较了四种常见的薄膜淀积工艺之间的区别与联系。对高密度等离子体气相淀积工艺的工艺特点、工艺原理、淀积设备和测量内容做了详细的说明。针对生产过程中经常出现的金属层中的电浆损伤缺陷导致的良率低的问题,进行了分析和研究。通过对金属层电浆损伤的现象的产生机理、形成原因、影响因素的研究,以及工作经验的总结和实验,提出了减少金属层电浆损伤现象出现的改善方法。从而提高了生产效率和工艺的稳定性,增加了产品的可靠性,提高了企业在业界的竞争力。
[Abstract]:With the development of integrated circuit manufacturing industry, miniaturization and miniaturization lead to higher and higher requirements for process technology. Among them, the thin film deposition technology (CVD) plays a very important role in promoting. The high density plasma vapor deposition process is an excellent thin film deposition technology and plays an important role in IC manufacturing with its superior performance. Based on the chemical vapor deposition process and taking the high density plasma vapor deposition process as the research object, this paper discusses the important production step of the thin film deposition technology in the integrated circuit manufacturing, and introduces the film deposition technology and process. The differences and relationships among four common film deposition processes are compared. The characteristics, principle, equipment and measurement of high density plasma vapor deposition are described in detail. Aiming at the problem of low yield caused by plasma damage defects in metal layer during production, this paper analyzes and studies the problem of low yield. Based on the study of the mechanism, cause and influencing factors of plasma damage in metal layer, as well as the summary and experiment of working experience, the improvement method of reducing the phenomenon of plasma damage in metal layer is put forward. Thus, the production efficiency and process stability are improved, the reliability of products is increased, and the competitiveness of enterprises in the industry is improved.
【学位授予单位】：天津大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN405

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