超薄埋氧层厚度对FDSOI器件短沟道效应影响

发布时间：2018-05-30 04:16

  本文选题：FDSOI + 超薄埋氧层　； 参考：《东北石油大学学报》2017年01期

【摘要】：随着CMOS技术发展到22nm技术节点以下,体硅平面器件达到等比例缩小的极限。全耗尽超薄绝缘体上硅CMOS(FDSOI)技术具有优秀的短沟道效应控制能力,利用TCAD软件,对不同埋氧层厚度的FDSOI器件短沟道效应进行数值仿真,研究减薄BOX厚度及器件背栅偏压对器件性能和短沟道效应的影响。仿真结果表明,减薄BOX厚度使FDSOI器件的性能和短沟道效应大幅提升,薄BOX衬底背栅偏压对FDSOI器件具有明显的阈值电压调制作用,6.00V的背栅偏压变化产生0.73V的阈值电压调制。在适当的背栅偏压下,FDSOI器件的短沟道特性(包括DIBL性能等)得到优化。实验结果表明,25nm厚BOX的FDSOI器件比145nm厚BOX的FDSOI器件关断电流减小近50%,DIBL减小近20%。
[Abstract]:With the development of CMOS technology below the 22nm technology node, the bulk silicon plane device reaches the limit of equal proportion reduction. Silicon CMOS FDSOI (silicon superthin insulator) technology has excellent control ability of short channel effect. The short channel effect of FDSOI devices with different buried oxygen layer thickness is numerically simulated by using TCAD software. The effects of thinning BOX thickness and back gate bias on device performance and short channel effect are studied. The simulation results show that the performance and short channel effect of FDSOI devices are greatly improved by thinning the thickness of BOX, and the threshold voltage modulation of FDSOI devices with thin BOX substrate backgate bias has obvious threshold voltage modulation effect of 6.00 V and a threshold voltage modulation of 0.73 V. The short channel characteristics (including DIBL performance) of FDSOI devices are optimized at a suitable backgate bias voltage. The experimental results show that the turn-off current of FDSOI device with 25nm thick BOX is nearly 50% lower than that of FDSOI device with 145nm thickness BOX.
【作者单位】： 中国科学院微电子研究所;微电子器件与集成技术重点实验室;
【基金】：国家科技重大专项(2013ZX02303-001-001)
【分类号】：TN386.1
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本文编号：1953882