大功率IGBT通用驱动器设计

发布时间：2018-06-02 06:51

本文选题：IGBT驱动 + 变门极电阻　；参考：《哈尔滨工业大学》2015年硕士论文

【摘要】：从IGBT问世至今,其发展极其迅速,其应用范围逐渐扩大,已遍布生活的多个方面,因此对于IGBT驱动器深入的研究也有了更深层次的意义。目前市面上大部分的大功率IGBT驱动器都是针对某款固定的IGBT模块制造的,因此通用性较差,小部分可以适用于一定功率范围内的IGBT器件,但驱动性能一般,且其价格又普遍偏高,所以设计一款具有高兼容性且驱动性能优良的IGBT驱动器对整个电力电子产业来说都具有极其重要的意义。本文分析了IGBT的结构及其工作原理,深入的研究了IGBT的工作特性,包括其开关特性、米勒效应。擎住效应等。然后利用Saber仿真软件对英飞凌公司型号为FZ1500R33HE3的IGBT进行了建模与分析,并与该IGBT的实际参数和用户手册中提供的波形进行了对比。为之后驱动电路和保护电路的设计提供了仿真基础。根据IGBT对驱动电路的要求,并针对目前市面上IGBT驱动模块的不足,设计了驱动器的故障反馈功能与驱动器参数配置功能。为了更加精确的控制IGBT使其工作在最佳状态和提高驱动器的兼容性,设计了变门极电阻的驱动电路设计方案。对IGBT的失效原因以及保护措施进行了分析,并对比传统的过流保护方式,提出一种改进的过流保护策略。使IGBT驱动器能自动检测出器件所处的故障类型,并采取不同的保护措施进行保护。最后根据以上的设计方案,完成了IGBT驱动器实物的制作,并在实测电路中对以上的理论进行验证。
[Abstract]:Since the advent of IGBT, it has developed very rapidly, and its application scope has gradually expanded, which has spread over many aspects of life, so the in-depth study of IGBT drivers has a deeper significance. At present, most of the high-power IGBT drivers in the market are made for a fixed IGBT module, so they have poor versatility. A small part of them can be used for IGBT devices in a certain power range, but the driving performance is general. And its price is generally on the high side, so it is very important to design a IGBT driver with high compatibility and good driving performance for the whole power electronics industry. In this paper, the structure and working principle of IGBT are analyzed, and the working characteristics of IGBT, including its switching characteristics and Hans Muller effect, are studied. Hold on to, etc. Then the Saber simulation software is used to model and analyze the IGBT of Infineon Company as FZ1500R33HE3, and the results are compared with the actual parameters of the IGBT and the waveform provided in the user's manual. The simulation foundation is provided for the design of drive circuit and protection circuit. According to the requirement of IGBT to drive circuit and the deficiency of IGBT driver module on the market at present, the fault feedback function of driver and the configuration function of driver parameters are designed. In order to control the IGBT more accurately and improve the compatibility of the driver, the drive circuit with variable gate resistance is designed. The failure reasons and protection measures of IGBT are analyzed. Compared with the traditional overcurrent protection, an improved overcurrent protection strategy is proposed. The IGBT driver can automatically detect the fault type of the device and take different protection measures. Finally, according to the above design scheme, the IGBT driver is made, and the above theory is verified in the actual circuit.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

【参考文献】