HVPE生长的高质量GaN纳米柱的光学性能

发布时间：2018-06-05 03:35

本文选题：氢化物气相外延(HVPE) + 氮化镓　；参考：《半导体技术》2017年07期

【摘要】：GaN纳米材料因具有优异的晶体质量和突出的光学性能及发射性能,日益受到关注。研究了一种利用氢化物气相外延(HVPE)系统生长高质量的Ga N纳米柱的方法。使用镍作为催化剂,在蓝宝石衬底上生长出了GaN纳米柱。在不同生长时间和不同HCl体积流量下制备了多组样品,使用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)谱对样品进行了分析表征。测试结果表明,在较低的HCl体积流量下,生长2 min的样品具有较高的晶体质量和较好的光学性质。讨论了不同生长阶段的GaN纳米结构发光特性的变化规律,认为纳米结构所产生的表面态密度大小差异会造成带边峰位的红移和展宽。
[Abstract]:GaN nanomaterials have attracted more and more attention due to their excellent crystal quality, outstanding optical properties and emission properties. A method for the growth of high quality gan nanorods using hydride vapor phase epitaxy (HVPE) system has been studied. GaN nanorods were grown on sapphire substrate using nickel as catalyst. A number of samples were prepared at different growth times and different volume flow rates of HCl. The samples were characterized by scanning electron microscopy (SEM) and photoluminescence (PL) spectra. The results show that the samples grown for 2 min have higher crystal quality and better optical properties at lower volume flow rate of HCl. The variation of luminescence characteristics of GaN nanostructures at different growth stages is discussed. It is considered that the difference in the density of surface states produced by the nanostructures will result in the redshift and broadening of the band side peaks.
【作者单位】：南京邮电大学电子科学与工程学院;南京大学电子科学与工程学院;
【基金】：国家自然科学基金资助项目(61574079,61274003,61400401,51461135002,61334009) 国家重点研发计划资助项目(2016YFB0400100,2016YFB0400602) 国家高技术研究发展规划资助项目(2015AA033305) 江苏省自然科学基金资助项目(BY2013077,BK20141320,BE2015111)
【分类号】：TN304.23

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