基于多晶硅填充的TSV工艺制作

发布时间：2018-06-06 05:23

  本文选题：MEMS + TSV　； 参考：《传感技术学报》2017年01期

【摘要】：硅通孔(TSV)技术用于MEMS器件可实现器件结构的垂直互联,达到减小芯片面积、降低器件功耗等目的。对TSV结构的刻蚀和填充工艺进行了研究,通过优化ICP刻蚀工艺参数获得了端口、中部、底部尺寸平滑减小、深宽比大于20∶1的硅通孔;利用LPCVD技术实现了基于多晶硅的通孔无缝填充;经测试,填充后通孔绝缘电阻达10 GΩ以上,电绝缘性能良好。
[Abstract]:Silicon through hole (TSVV) technology can realize the vertical interconnection of MEMS devices, reduce the chip area and reduce the power consumption of the devices. The etching and filling process of TSV structure was studied. The port was obtained by optimizing the parameters of ICP etching process. In the middle, the bottom dimension was reduced smoothly, and the aspect ratio was more than 20:1. The through hole filling based on polysilicon is realized by LPCVD technology, and the through hole insulation resistance is more than 10G 惟, and the electrical insulation performance is good.
【作者单位】： 华东光电集成器件研究所;
【分类号】：TN405
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本文编号：1985311