基于量子阱带间跃迁的红外探测器原型器件（英文）

发布时间：2018-06-07 02:32

本文选题：铟镓砷/砷化镓 + 带间跃迁　；参考：《红外与毫米波学报》2017年02期

【摘要】：近期,实验发现PN结中局域载流子具有极高提取效率,并导致吸收系数的大幅度增加.文中报道基于上述现象的新型量子阱带间跃迁红外探测器原型器件的性能.利用含有InGaAs/GaAs多量子阱的PIN二极管,在无表面减反射膜的实验条件下,利用仅100 nm的有效吸收厚度,实现了31%的外量子效率.基于该数值推算得到,量子阱的光吸收系数达3.7×10~4cm~(-1),该数值高于传统透射实验测量结果一个数量级.上述实验结果指出,利用量子阱带间跃迁工作机制,有望实现新颖的器件结构设计和提高现有器件性能.
[Abstract]:Recently, it is found that the local carriers in PN junction have very high extraction efficiency and lead to a large increase in absorption coefficient. This paper reports the performance of a novel quantum well interband transition infrared detector based on the above phenomena. The external quantum efficiency of 31% is achieved by using the PIN diode containing InGaAs/GaAs multiple quantum wells under the experimental condition of no surface antireflection film and the effective absorption thickness of only 100nm. The optical absorption coefficient of the quantum well is 3.7 脳 10 ~ (4) cm ~ (-1) ~ (-1), which is an order of magnitude higher than that of the conventional transmission experiment. The experimental results show that it is possible to achieve novel device structure design and improve the performance of existing devices by using the quantum well interband transition mechanism.
【作者单位】：中国科学院物理研究所北京凝聚态国家实验室北京新能源材料与器件重点实验室清洁能源重点实验室;
【基金】：Supported by the National Natural Science Foundation of China(11574362,61210014,11374340,and 11474205) Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission(Z151100003515001)
【分类号】：TN215

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