当前位置:主页 > 科技论文 > 电子信息论文 >

基于平面晶体管型器件的突触可塑性模拟

发布时间:2018-06-11 13:49

  本文选题:平面型结构 + 晶体管 ; 参考:《科学通报》2017年Z2期


【摘要】:在数据信息膨胀的大背景下,传统的冯诺依曼体系结构的计算机早已无法满足灵活处理和存储大量信息的需求.与之相比,大脑高度并行的非线性信息处理能力展现出了明显的优势.突触是大脑神经元之间信息交换的连接渠道,突触可塑性是生物学习和记忆的分子基础,为了模拟大脑,必须研究出具有生物突触功能的物理器件,从而实现能够在功能上模拟类脑行为的神经形态电路.研究表明,对于场效应晶体管,把具有可调忆阻特性的场效应晶体管的传导沟道和栅极作为信号传输和调节模块,可以分别对应于生物突触中的离子传导和神经递质释放的过程;对于电子型晶体管,可以利用电操作模式中的OFF(ON)状态的弛豫倾向来模拟生物兴奋(抑制)过程,因而在晶体管中可以实现对突触功能的模拟.本文总结了近年来研究人员用平面晶体管结构的突触器件模拟的突触可塑性功能,包括:短时程突触可塑性(包含双脉冲易化和双脉冲抑制,动态过滤(高通滤波/低通滤波),处理时空关联的脉冲,适应等)、长时程突触可塑性、短时程向长时程的转变、放电时间依赖可塑性、分流抑制等,详细说明了这些功能的特点及模拟方法并对其未来发展进行了展望.
[Abstract]:In the context of the expansion of data and information, the traditional Von Neumann architecture computer has long been unable to meet the need for flexible processing and storage of large amounts of information. Plasticity is the molecular basis of biological learning and memory. In order to simulate the brain, a physical device with a biological synaptic function must be studied to achieve a neuromorphological circuit capable of simulating the brain behavior of the brain. The research shows that the field effect transistors have the conduction channel and gate with a field effect transistor with adjustable memory resistance characteristics. As a signal transmission and adjustment module, it can correspond to the process of ion conduction and neurotransmitter release in the biological synapse. For electronic transistors, the relaxation tendency of the OFF (ON) state in the electrical operation mode can be used to simulate the biological excitation (inhibition) process, thus the synaptic function can be simulated in the transistor. This paper summarizes the synaptic plasticity functions of the researchers in recent years using a planar transistor structure to simulate synaptic plasticity, including short term synaptic plasticity (including double pulse facilitation and double pulse suppression, dynamic filtering (high pass filter / low pass filtering), processing of spatio-temporal pulses, adaption, etc.), long term synaptic plasticity, short distance direction length The change of time, the time dependent plasticity of the discharge time, and the inhibition of flow diversion, etc., are described in detail. The characteristics and simulation methods of these functions are described in detail, and their future development is prospected.
【作者单位】: 南京邮电大学信息材料与纳米技术研究院有机电子与信息显示国家重点实验室培育基地江苏省国家先进材料协同创新中心;南京工业大学先进材料研究院江苏省柔性电子重点实验室先进生物与化学制造协同创新中心;
【基金】:国家重点基础研究发展计划(2014CB648300,2015CB932200) 国家自然科学基金(61475074,61204095,61136003,61377019);国家自然科学基金优秀青年科学基金(21322402) 江苏省自然科学基金(BM2012010) 省级大学生创新训练计划(SYB2016009) 有机电子与信息显示协同创新中心 长江学者和创新团队(IRT_15R37) 江苏省教育委员会自然科学基金(14KJB510027) 江苏省高校学术优先发展计划(PAPD)资助
【分类号】:TN32

【相似文献】

相关期刊论文 前1条

1 郑畅;;ROHM开发出比以往产品小50%的世界最小晶体管“VML0604”[J];半导体信息;2014年02期



本文编号:2005493

资料下载
论文发表

本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2005493.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户5739e***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com