大功率压接式IGBT内部芯片并联均流的研究

发布时间：2018-06-13 02:01

本文选题：压接式IGBT + 电流均衡　；参考：《华北电力大学(北京)》2017年硕士论文

【摘要】：在智能电网的发展中,安全是电网运行的重要前提。但电力来源比较复杂,除了常规的水电、火电外,大规模的新能源接入到了电网中。正由于电力来源的多样化,给电网的安全、平稳运行带来严峻挑战。要将这些来源复杂、大小不均的“粗电”变为均匀、平稳、安全的“精电”,需要IGBT这种半导体装置发挥调节作用,且其功率越大,能够承受的电压区间也就越广,调控能力随之增强,电网安全性能因此也会越高。在此背景下,研发大功率压接式IGBT成为了电网发展的当务之急。而为了保证压接式IGBT的可靠性,必须考虑到其内部各芯片的电流均衡情况。由于续流二极管的反向恢复特性,压接式IGBT的开通过程中极易出现电流过冲。若再加上内部芯片电流不均衡,必然会使得某一芯片电流过大而烧毁,影响了器件和系统的可靠性。因此本文对大功率压接式IGBT内部芯片的电流均衡进行了一系列研究:1.分析了压接式IGBT的结构、工作原理及基本特性。2.将影响器件内部芯片均流的因素分为两类,并通过理论分析和仿真相结合,分析了各个参数变化对电流分布的影响情况。最终给出了将芯片的电流不均衡度限制在10%以内时,各参数的范围。3.提出了4种芯片电流均衡的方案,分别为降额法、栅极电阻补偿法、多个参数匹配调节法、布局优化。最后以3300V/1500A的压接式IGBT器件为例,详细分析了内部芯片电流分布的特点,并提出相应的改进方案。
[Abstract]:In the development of smart grid, security is an important prerequisite for grid operation. But the power source is complicated, besides the conventional hydropower and thermal power, large-scale new energy is connected to the power grid. Due to the diversification of power sources, the security and smooth operation of the power grid brings serious challenges. In order to change these "coarse electricity" from complex sources to "fine electricity" that is uniform, stable, and safe, IGBT, a semiconductor device, is required to play a regulatory role, and the greater the power, the wider the voltage range it can withstand. With the increase of regulation and control ability, the security performance of power grid will be higher. In this context, the research and development of high-power voltage-connected IGBT has become an urgent task for the development of power grid. In order to ensure the reliability of IGBT, the current balance of each chip must be considered. Due to the reverse recovery characteristics of the diode, current overshoot is easy to occur in the on-off process of the voltage-connected IGBT. If the internal chip current is not balanced, it will make a chip current too large and burn down, which will affect the reliability of the device and system. Therefore, in this paper, a series of studies on the current equalization of high power voltage-connected IGBT chips are carried out. The structure, working principle and basic characteristics of pressure-connected IGBT are analyzed. The factors that affect the current sharing in the chip are divided into two categories, and the influence of various parameters on the current distribution is analyzed through theoretical analysis and simulation. Finally, the range of parameters. 3 is given when the current imbalance of the chip is limited to less than 10%. Four kinds of current equalization schemes are put forward, which are the reduction method, the gate resistance compensation method, the multi-parameter matching and adjusting method, and the layout optimization. Finally, taking the 3300V / 1500A voltage-connected IGBT device as an example, the characteristics of the internal chip current distribution are analyzed in detail, and the corresponding improvement scheme is put forward.
【学位授予单位】：华北电力大学(北京)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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